P
Pablo A. Denis
Researcher at University of the Republic
Publications - 162
Citations - 4542
Pablo A. Denis is an academic researcher from University of the Republic. The author has contributed to research in topics: Graphene & Band gap. The author has an hindex of 33, co-authored 154 publications receiving 3991 citations. Previous affiliations of Pablo A. Denis include University of São Paulo & University of California, Davis.
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Band gap opening of monolayer and bilayer graphene doped with aluminium, silicon, phosphorus, and sulfur
TL;DR: The chemical doping of monolayer and bilayer graphene with aluminium, silicon, phosphorus and sulfur was investigated in this paper, where the formation of interlayer bonds in bilayer GAs was investigated.
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Is It Possible to Dope Single-Walled Carbon Nanotubes and Graphene with Sulfur?
TL;DR: The authors' simulations indicate that sulfur doping can modify the electronic structure of the SWCNTs and graphene, depending on the sulfur content, and S-doped graphene may be a smart choice for constructing nanoelectronic devices, since it is possible to modulate the electronic properties of the sheet by adjusting the amount of sulfur introduced.
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Mechanical properties of Graphene Nanoribbons
TL;DR: The most relevant results indicate that Young's modulus is considerable higher than those determined for graphene and carbon nanotubes, suggesting the potential for using carbon nanostructures in nano-electronic devices in the near future.
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Mechanical properties of graphene nanoribbons.
TL;DR: In this paper, the structural, electronic and mechanical properties of zigzag graphene nanoribbons were investigated by applying density functional theory within the generalized gradient approximation-Perdew-Burke-Ernzerhof (GGA-PBE) approximation.
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Comparative Study of Defect Reactivity in Graphene
Pablo A. Denis,Federico Iribarne +1 more
TL;DR: In this paper, the authors applied dispersion corrected density functional theory to gauge the reactivity of the most common defects found in graphene, and found that the extent to which defects increase reactivity is strongly dependent on the functional group to be attached and the number of functional groups attached.