P
Paul R. Young
Researcher at University of Kent
Publications - 89
Citations - 1557
Paul R. Young is an academic researcher from University of Kent. The author has contributed to research in topics: Slot antenna & Waveguide (electromagnetism). The author has an hindex of 17, co-authored 88 publications receiving 1386 citations. Previous affiliations of Paul R. Young include University of Surrey & Kent State University.
Papers
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Journal ArticleDOI
W-band substrate integrated waveguide slot antenna
TL;DR: In this paper, a W-band substrate integrated waveguide slot antenna has been designed and tested using a reduced height waveguide in photo-imageable thick film technology, which is used for return loss and radiation pattern measurements.
Journal ArticleDOI
Fabrication, RF Characteristics and Mechanical Stability of Self-Assembled 3D Microwave Inductors
TL;DR: In this article, a method for the fabrication of vertical inductors for radio-frequency and microwave applications is presented, which uses five levels of lithography and electroplating, with no substrate removal, high temperatures or serial process steps.
Proceedings Article
Compact folded waveguides
N. Grigoropoulos,Paul R. Young +1 more
TL;DR: In this paper, a folded waveguide structure is presented farmed from microwave laminates as a space saving alternative of the rectangular waveguide, which results in a width reduction of e r -1/2 /2 over standard air filled rectangular waveguides making integrated waveguide viable at low microwave frequencies.
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Photoimageable thick-film millimetre-wave metal-pipe rectangular waveguides
TL;DR: In this paper, a dielectric-filled metal-pipe rectangular waveguide has been fabricated using photo-imageable thick-film materials, which incorporated a new transition from CPW-to-TFMS-to MPRWG.
Proceedings ArticleDOI
MEMS high Q microwave inductors using solder surface tension self-assembly
TL;DR: In this article, the authors presented microwave inductors of 1.5 to 2.5 nH fabricated out-of-plane by a self-assembly process, and the consequent de-coupling from the substrate allows improved Q (from 4 to 20) and frequency of maximum Q(from 0.5 GHz to 3 GHz) on low resistivity silicon substrates.