P
Peter Yeh
Researcher at Georgia Institute of Technology
Publications - 10
Citations - 219
Peter Yeh is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Self-healing hydrogels & Dissipative particle dynamics. The author has an hindex of 7, co-authored 10 publications receiving 184 citations. Previous affiliations of Peter Yeh include Sandia National Laboratories.
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Free swimming of an elastic plate plunging at low Reynolds number
Peter Yeh,Alexander Alexeev +1 more
TL;DR: In this paper, the free swimming of an elastic plate plunging sinusoidally in a viscous fluid with a Reynolds number of 250 was examined, and the authors found that free swimming velocity is maximized when the swimmer is driven near the first natural frequency leading to larger swimmer deformations.
Journal ArticleDOI
Effect of aspect ratio in free-swimming plunging flexible plates
Peter Yeh,Alexander Alexeev +1 more
TL;DR: In this paper, the authors used three dimensional computer simulations to investigate the free swimming of plunging elastic plates with aspect ratios ranging from 0.5 to 5 in a viscous fluid with Reynolds number 250.
Journal ArticleDOI
Self-Propelled Microswimmer Actuated by Stimuli-Sensitive Bilayered Hydrogel
TL;DR: In this article, a microscopic swimmer made of a bilayered responsive hydrogel capable of swimming in a viscous fluid when actuated by a periodically applied stimulus was designed.
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Mesoscale modelling of environmentally responsive hydrogels: emerging applications
Peter Yeh,Alexander Alexeev +1 more
TL;DR: Various computational approaches to model responsive hydrogels are reviewed and dissipative particle dynamics (DPD), a particle-based mesoscale method, is focused on.
Journal ArticleDOI
Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
Lyle Alexander Menk,Daniel Josell,Thomas P. Moffat,Ehren Baca,Matthew Glenn Blain,A. Smith,Jason James Dominguez,Jaime L. McClain,Peter Yeh,Andrew E. Hollowell +9 more
TL;DR: An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed and a brief qualitative discussion of the procedures used to identify and optimize the bottom- up void- free feature filling is presented.