P
Pierre Yves Delaunay
Researcher at Northwestern University
Publications - 24
Citations - 1251
Pierre Yves Delaunay is an academic researcher from Northwestern University. The author has contributed to research in topics: Superlattice & Quantum efficiency. The author has an hindex of 16, co-authored 24 publications receiving 1187 citations.
Papers
More filters
Journal ArticleDOI
Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
TL;DR: In this article, the authors presented an alternative design of type II superlattice photodiodes with the insertion of a mid-wavelength infrared M-structure AlSb∕GaSb ∕InAs∕GASb ∼AlSb, which has a larger carrier effective mass and a greater band discontinuity as compared to the standard type II Superlattices at the valence band.
Journal ArticleDOI
Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm
TL;DR: In this article, the dependence of the quantum efficiency on device thickness of type-II InAs∕GaSb superlattice photodetectors with a cutoff wavelength around 12μm was reported.
Journal ArticleDOI
Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation
Andrew Hood,Pierre Yves Delaunay,Darin Hoffman,Binh-Minh Nguyen,Yajun Wei,Manijeh Razeghi,Vaidya Nathan +6 more
TL;DR: In this paper, a stable passivation layer, the electrical properties of which do not change as a function of the ambient environment nor time, has been prepared by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer.
Journal ArticleDOI
Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K
TL;DR: In this article, the effect of the depletion region placement on the quantum efficiency in a thick structure was studied, and the authors achieved a topside illuminated quantum efficiency of 50% for an N-on-P diode at 8.0μm at 77 K.
Journal ArticleDOI
Passivation of type-II InAs∕GaSb double heterostructure
TL;DR: In this paper, the ability of type-II InAs∕GaSb superlattice heterodiodes to be more resilient than homojunctions diodes in improving sidewall resistivity through the use of various passivation techniques was reported.