Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.

Depositing tungsten into high aspect ratio features

Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features. Inside-out fill techniques can include selective deposition on etched tungsten layers in features. Conformal and non-conformal etch techniques can be used according to various implementations. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) word lines. Examples of applications include logic and memory contact fill, DRAM buried word line fill, vertically integrated memory gate/word line fill, and 3-D integration with through-silicon vias (TSVs).

Tungsten feature fill

Methods of filling gaps or recessed features on substrates are provided. According to various embodiments, the methods involve bulk deposition of tungsten to partially fill the feature followed by a removing a top portion of the deposited tungsten. In particular embodiments, the top portion is removed by exposing the substrate to activated fluorine species. By selectively removing sharp and protruding peaks of the deposited tungsten grains, the removal operation polishes the tungsten along the feature sidewall. Multiple deposition-removal cycles can be used to close the feature. The filled feature is less prone to coring during CMP.

Methods for depositing tungsten films having low resistivity for gapfill applications

Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.

Deposition of tungsten nitride

Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.

Method of forming low-resistivity tungsten interconnects

A method for preventing tungsten contact plug loss problem after a backside pressure fault problem in a deposition chamber is provided. In the method, first deposited by a silane soak step and a tungsten nucleation layer is subsequently deposited, a heat treating step by a rapid thermal process is carried out at a temperature of at least 600° C. for a time period of at least 10 seconds. The heat treating step significantly improves the uniform distribution of the silicon prenucleation layer and substantially prevents the formation of any tungsten silicide layers such that during an etchback process, the dry etchant utilized does not remove a tungsten silicide layer at a much faster rate and thereby does not result in a plug loss problem.

Method for preventing tungsten contact/via plug loss after a backside pressure fault

Abstract Background and aims Individuals with schizophrenia may often experience poor sleep, self-stigma, impaired social functions, and problematic smartphone use. However, the temporal relationships between these factors have not been investigated. The present study used a longitudinal design to examine potential mediating roles of poor sleep and self-stigma in associations between problematic smartphone use and impaired social functions among individuals with schizophrenia. Methods From April 2019 to August 2021, 193 individuals with schizophrenia (mean [SD] age = 41.34 [9.01] years; 88 [45.6%] males) were recruited and asked to complete three psychometric scales: the Smartphone Application-Based Addiction Scale to assess problematic smartphone use; the Pittsburgh Sleep Quality Index to assess sleep quality; and the Self-Stigma Scale-Short Scale to assess self-stigma. Social functioning was evaluated by a psychiatrist using the Personal and Social Performance Scale. All measures were assessed five times (one baseline and four follow-ups) at three-month intervals between assessments. Results General estimating equations found that problematic smartphone use (coefficient = −0.096, SE = 0.021; P < 0.001), sleep quality (coefficient = −0.134, SE = 0.038; P < 0.001), and self-stigma (coefficient = −0.612, SE = 0.192; P = 0.001) were significant statistical predictors for social functioning. Moreover, sleep quality and self-stigma mediated associations between problematic smartphone use and social functioning. Conclusion Problematic smartphone use appears to impact social functioning longitudinally among individuals with schizophrenia via poor sleep and self-stigma concerns. Interventions aimed at reducing problematic smartphone use, improving sleep, and addressing self-stigma may help improve social functioning among individuals with schizophrenia.

https://akjournals.com/downloadpdf/journals/2006/aop/article-10.1556-2006.2022.00012/article-10.1556-2006.2022.00012.pdf

A longitudinal study of the effects of problematic smartphone use on social functioning among people with schizophrenia: Mediating roles for sleep quality and self-stigma

Po-Jen Chen

Papers

Method for preventing tungsten contact/via plug loss after a backside pressure fault

A longitudinal study of the effects of problematic smartphone use on social functioning among people with schizophrenia: Mediating roles for sleep quality and self-stigma