A Three Dimensional Structure (3DS) Memory (100) allows for physical separation of the memory circuits (103) and the control logic circuit (101) onto different layers (103) such that each layer may be separately optimized. One control logic circuit (101) suffices for several memory circuits (103), reducing cost. Fabrication of 3DS memory (100) involves thinning of the memory circuit (103) to less than 50 microns in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections (105) are used. The 3DS memory (100) manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.

Three dimensional structure memory

The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.

Vertical system integration

Three dimensional structure integrated circuit

A passive system for accurately determining the location of a device positioned or implanted within a patient's body is disclosed. The system includes a detectable mechanism mounted at the tip of the device which is configured to generate a self-induced magnetic field, and a detector for detecting the magnetic field of the magnet. The detector is detached from the magnet. In a preferred form, the detectable mechanism is a direct current permanent magnet. Methods of using such a system to accurately determine the location of a device within a patient's body are also disclosed.

Systems and methods for determining the location of an implanted device including a magnet

General purpose methods for the fabrication of 5 integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially forced from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D 1C fabrication.

Membrane 3D IC fabrication

The present invention discloses a single sensor performing both tactile and proximity sensing. The sensor includes a magnetic field generator, a magnetic field sensor for sensing changes in the magnetic field in response to an object changing position with respect to the field to provide proximity sensing. By providing for relative movement between the response to the object touching the sensor, tactile sensing is provided.

Pradeep K. Yadav

Papers

Magneto-inductive sensor for performing tactile and proximity sensing