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Qiang Xu

Researcher at Jilin University

Publications -  15
Citations -  179

Qiang Xu is an academic researcher from Jilin University. The author has contributed to research in topics: Field electron emission & Carbon. The author has an hindex of 6, co-authored 11 publications receiving 89 citations.

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Improving the Quantum Capacitance of Graphene-Based Supercapacitors by the Doping and Co-Doping: First-Principles Calculations.

TL;DR: It is found that the N/S and N/P co-doped graphene with single vacancy is suitable for asymmetric supercapacitors, and it is proposed that they could be used as ideal electrode materials for symmetry superCapacitors.
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Quantum Capacitance of Silicene-Based Electrodes from First-Principles Calculations

TL;DR: In this article, it was found that the introduction of vacancy defects with the doping in silicene can enhance the quantum capacitance of the electrodes of supercapacitors, and the enhancement of capacitance is attributed to the presence of localized states around the Fermi level.
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Density functional theory study of Li binding to graphene

TL;DR: In this paper, the authors studied the interaction between Li and graphene by considering two kinds of models, which are related to the configurations of Li adsorption and the concentration of Li on graphene.
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Change detection-based co-seismic landslide mapping through extended morphological profiles and ensemble strategy

TL;DR: Wang et al. as mentioned in this paper proposed an automated co-seismic landslide mapping approach, which removed the dependence on the manual labeling for training samples through an unsupervised change detection process, and introduced multi-scale extended morphological profiles to comprehensively describe the characteristics of various landslides induced by earthquake.
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First-Principles Calculation of Optimizing the Performance of Germanene-Based Supercapacitors by Vacancies and Metal Atoms

TL;DR: Germanene with folded atomic layers has double surfaces and high surface/volume ratio, similar to carbon nanomaterials, and is expected to be used in supercapacitors and field effect transistors as discussed by the authors.