Provided are methods of forming sealed via structures. One method involves: (a) providing a semiconductor substrate having a first surface and a second surface opposite the first surface; (b) forming a layer on the first surface of the substrate; (c) etching a via hole through the substrate from the second surface to the layer, the via hole having a first perimeter at the first surface; (d) forming an aperture in the layer, wherein the aperture has a second perimeter within the first perimeter; and (e) providing a conductive structure for sealing the via structure. Also provided are sealed via structures, methods of detecting leakage in a sealed device package, sealed device packages, device packages having cooling structures, and methods of bonding a first component to a second component.

Device package and methods for the fabrication and testing thereof

A light-shieldable film (12) is formed on one principal plane of an optically transparent substrate (11), and the light-shieldable film (12) has a first light-shieldable film (13) and a second light-shieldable film (14) overlying the first light-shieldablefilm (13). The first light-shieldable film (13) is a film that is not substantially etched by fluorine-based(F-based)dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film (14) is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

Photomask blank, photomask and fabrication method thereof

PROBLEM TO BE SOLVED: To provide a photomask having a fine photomask pattern formed thereon with high precision, and also to provide a photomask blank for the photomask. SOLUTION: A light-shieldable film 12 is formed on one principal plane of an optically transparent substrate 11, wherein the light-shieldable film 12 comprises a first light-shieldable film 13 and a second light-shieldable film 14 successively layered. The first light-shieldable film 13 is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldale film 14 is the film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition metal nitride or silicon/transition metal oxynitride. The silicon-containing compound has a composition of 10 to 95 at% silicon, 0 to 60 at% oxygen, 0 to 57 at% nitrogen, and 0 to 35 at% transition metal, and the transition metal is, for example, molybdenum (Mo). COPYRIGHT: (C)2006,JPO&NCIPI

Photomask blank, photomask and method for manufacturing the same

An automatic sound field correcting device applies signal processing onto audio signals of plural channels and outputs processed audio signals to corresponding plural speakers. The automatic sound field correcting device includes: a noise measuring unit for measuring environmental noise level; a signal level determining unit for determining a measurement signal level based on the environmental noise level; and a correcting unit for outputting a measurement signal having the determined measurement signal level to perform automatic sound field correction.

Automatic sound field correcting device

PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask on which a fine photomask pattern is formed with high accuracy, and to provide a mask blank for producing the above mask. SOLUTION: A semitransparent film 15 having a predetermined phase shift and transmittance to exposure light and a light shielding film 12 placed on the semitransparent film 15 are disposed on one principal face of a transparent substrate 11 such as quartz as a photomask substrate. The light shielding film 12 is surely a so-called "light shielding film" but it can also act as an antireflection film. The semitransparent film 15 is a halftone phase shift layer comprising a halftone material containing both of silicon (Si) and molybdenum (Mo) as an absorbent material. In order to use the halftone phase shift mask blank for producing a mask for ArF exposure, the film thickness and composition of the light shielding film 12 are selected to obtain the optical density OD of the film in the range of 1.2 to 2.3 with respect to light at 193 or 248 nm wavelength. COPYRIGHT: (C)2007,JPO&INPIT

Phase shift mask blank, phase shift mask, and method for manufacturing the same

PURPOSE: To surely shield the peripheral part of an effective region of a halftone phase shift mask from light by a simple method without using a complicated light-shielding band which is conventionally used. CONSTITUTION: A translucent phase shift film 2a of a desired pattern and a light-shielding film 11b of almost the same pattern are formed on a transparent substrate 1 by etching. Substrate 1 consists of the effective region 8 of an area (a×b) where the desired pattern is formed and the peripheral part 9 surrounding the effective region. The light-shielding film 11b is deposited on both of the phase shift film 2a in the peripheral part 9 and the phase shift film 2a in the effective region 8. However, the edge of the phase shift film 2a is formed to project in the horizontal direction by length Z from the edge of the light- shielding film 11b. With this projected part, the phase of exposure light is inverted between the light-shielding part and the light-transmitting part which interpose the projected part between them so that these parts can be clearly separated from each other.

Phase shift mask and its production

PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank in which the transmittance can be easily controlled without varying phase difference by controlling the refractive index of the transmittance controlling layer to a desired value in a shifter layer comprising a phase difference controlling layer and the transmittance controlling layer, and a halftone phase shift mask. SOLUTION: The halftone phase shift mask blank 10 has the shifter layer 4 comprising the transmittance controlling layer having the refractive index n satisfying 0.9≤n≤1.1 and the extinction coefficient k satisfying 1.0<k and the phase difference controlling layer 3 having the phase difference controlled to 180, on a transparent substrate 1. A resist pattern 5 is formed on the halftone phase shift mask blank 10, the shifter layer 4 is patterned by dry etching or the like, and the resist pattern 5 is removed to obtain the halftone phase shift mask 100 having the shift pattern 4a comprising a transmittance controlling pattern 2a and a phase difference controlling pattern 3a. COPYRIGHT: (C)2004,JPO&NCIPI

Halftone phase shift mask blank, and halftone phase shift mask

PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask which satisfies the optical constant as a phase shift mask with exposure light (not only KrF excimer laser but ArF excimer laser as well) and is capable of controlling the reflectivity at the exposure light and the transmittance at an inspection wavelength and a blank for the phase shift mask. SOLUTION: The translucent regions 27 of the halftone type phase shift mask having transparent regions 28 and translucent regions 27 to the exposure light on a translucent substrate 21 and the blank for the mask consist of single layer or >=2 layers of multilayered films and at least one layer thereof are formed of zirconium silicide compd. thin films. Further, the zirconium silicide compd. thin films consist of the single layer film or multilayered films of the zirconium silicide compd. thin films. The zirconium silicide compd. thin films are formed of compd. thin films selected from a group consisting of zirconium, silicon, oxygen, nitrogen and halogen elements.

Blank for halftone type phase shift mask and halftone type phase shift mask

PROBLEM TO BE SOLVED: To provide a phase shift photomask which has excellent translucency over a wide wavelength region, facilitates the phase difference control of the phase shift photomask and contributes to an improvement in the accuracy of the phase difference and a blank for this phase shift photomask. SOLUTION: The blank 4 for the phase shift photomask is manufactured by forming a glass substrate 1, a phase difference adjustment layer 2 consisting of a zirconium compd. thin film having the etching rate smaller than the etching rate of a phase shift layer 3 and the phase shift layer 3 on a transparent glass substrate 1. The phase shift photomask is manufacture by forming resist patterns 5 on the phase shift layer 3 and executing dry etching with the resist patterns 5 as a mask and forming dug parts 6 on the phase shift patterns 3a and the phase difference adjustment layer 2. COPYRIGHT: (C)1998,JPO

Phase shift photomask and blank for phase shift photomask

PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask capable of having good optical characteristics to both exposure light ArF (wavelength = 193 nm) of a short wavelength and inspection light (wavelength = 365 nm) of a relatively long wavelength. SOLUTION: The transparent base material 2 of the halftone type phase shift mask constituted by laminating a semi-transparent phase shift film 3a of a prescribed pattern shape on the transparent base material 2 is formed of calcium fluoride as an essential component. This translucent phase shift film 3a is formed to include a zirconium silicide. The reflectivity to the exposure light of the short wavelength may be decreased and the transmittance to the inspection light of the relatively long wavelength may be decreased. COPYRIGHT: (C)2000,JPO

欽司大久保

Papers

Phase shift mask and its production

Halftone phase shift mask blank, and halftone phase shift mask

Blank for halftone type phase shift mask and halftone type phase shift mask

Phase shift photomask and blank for phase shift photomask

Halftone type phase shift mask, blank for halftone type phase shift mask, and production of halftone type phase shift mask

欽司 大久保

Papers

Phase shift mask and its production

Halftone phase shift mask blank, and halftone phase shift mask

Blank for halftone type phase shift mask and halftone type phase shift mask

Phase shift photomask and blank for phase shift photomask

Halftone type phase shift mask, blank for halftone type phase shift mask, and production of halftone type phase shift mask

欽司大久保