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Patent

Phase shift mask and its production

TLDR
In this paper, a translucent phase shift mask and a light-shielding film are formed on a transparent substrate by etching, and the projected part of the phase shift film is formed to project in the horizontal direction by length Z from the edge of the light shielding film.
Abstract
PURPOSE: To surely shield the peripheral part of an effective region of a halftone phase shift mask from light by a simple method without using a complicated light-shielding band which is conventionally used. CONSTITUTION: A translucent phase shift film 2a of a desired pattern and a light-shielding film 11b of almost the same pattern are formed on a transparent substrate 1 by etching. Substrate 1 consists of the effective region 8 of an area (a×b) where the desired pattern is formed and the peripheral part 9 surrounding the effective region. The light-shielding film 11b is deposited on both of the phase shift film 2a in the peripheral part 9 and the phase shift film 2a in the effective region 8. However, the edge of the phase shift film 2a is formed to project in the horizontal direction by length Z from the edge of the light- shielding film 11b. With this projected part, the phase of exposure light is inverted between the light-shielding part and the light-transmitting part which interpose the projected part between them so that these parts can be clearly separated from each other.

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Patent

Mask blank and photomask

TL;DR: In this paper, the problem of providing a mask blank suitable to a photomask for FPD was addressed, where the mask blank has a substrate consisting of a light shield film and an upper-layer film.
Patent

Photomask and its production

TL;DR: In this article, a phase shift mask pattern is constructed by substituting the ends of the intrinsic mask with the translucent films, which give rise to a phase difference of about 180 degrees between the light transmitted there through and the light not transmitted therethrough.
Patent

Phase shift mask and design method therefor

TL;DR: In this paper, a plurality of main patterns are placed at a predetermined pitch P, and the individual main pattern is extended by a predetermined resize quantity Δ to form virtual regions, where the overlapped part is placed between the virtual regions and is set as a halftone region forming part having a predetermined transmission factor T with respect to exposure light, such that a transferred size of the main patterns on a predetermined resist film is settled within a desired range according to the change of the pitch P under a predetermined exposure condition.
Patent

Halftone phase shift mask blank, and halftone phase shift mask

TL;DR: In this paper, a halftone phase shift mask blank is provided in which the transmittance can be easily controlled without varying phase difference by controlling the refractive index of the transmissive layer to a desired value in a shifter layer.
Patent

Method of repairing phase shift mask

TL;DR: In this paper, a method of repairing a phase shift mask includes exposing upper and side surfaces of the phase shift pattern of the mask, selectively forming a passivation layer on the surfaces of exposed phase shift patterns, and then cleaning the mask on which the passivation layers are formed.