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Qinghua Chen

Researcher at Kunming University of Science and Technology

Publications -  5
Citations -  54

Qinghua Chen is an academic researcher from Kunming University of Science and Technology. The author has contributed to research in topics: Temperature coefficient & Ceramic. The author has an hindex of 3, co-authored 5 publications receiving 28 citations.

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Electrical and magnetic properties of La1−xSrxMnO3 (0.1 ≤ x≤ 0.25) ceramics prepared by sol–gel technique

TL;DR: In this article, X-ray diffraction analysis showed that all samples exhibited single perovskite structure and no second phase was detected, and particle connectivity on the surface of sample, and grain size increased with the increase in Sr doping.
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Improved temperature coefficient of resistance in La1-xCaxMnO3:Ag0.2 (0.25 ≤ x≤ 0.33) ceramics prepared by sol–gel method

TL;DR: A series of La1−xCaxMnO3 polycrystalline ceramic materials were prepared by sol-gel method using methanol as solvent, and X-ray diffraction analysis showed that all samples consisted of pure perovskite structure with no second phase as mentioned in this paper.
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Grain size effect on the electrical conductivity of submicron Sm-heavily-doped ceria

TL;DR: In this article, the grain size effect on the electrical conductivity of the submicron samarium-heavily-doped ceria, the Ce0.8Sm0.2O1.9 (SDC20) ceramics with grain sizes from 128-nm to 533-nm were prepared by sintering at 1000-1300°C in the air atmosphere.
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Enhanced temperature coefficient of resistance and magnetoresistance of Co-doped La0.67Ca0.33MnO3 polycrystalline ceramics

TL;DR: In this article, the influence of Co doping on electrical and magnetic properties of polycrystalline ceramics is systematically studied and the results reveal that the TCR and magnetoresistance can be optimized by tuning the Co content.
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Effect of different post-annealing durations on electromagnetic properties of La0.67Ca0.33MnO3:Ag0.2 thin films prepared by pulsed laser deposition

TL;DR: In this paper, annealed thin films were obtained by pulsed laser deposition followed by post-annealing at 1200°C for varied durations, and X-ray diffraction results showed that annealing films exhibited stronger diffraction peaks and C-axis preferred growth.