4. Survey of Novel Multiphoton Active Materials 1257 4.1. Multiphoton Absorbing Systems 1257 4.2. Organic Molecules 1257 4.3. Organic Liquids and Liquid Crystals 1259 4.4. Conjugated Polymers 1259 4.4.1. Polydiacetylenes 1261 4.4.2. Polyphenylenevinylenes (PPVs) 1261 4.4.3. Polythiophenes 1263 4.4.4. Other Conjugated Polymers 1265 4.4.5. Dendrimers 1265 4.4.6. Hyperbranched Polymers 1267 4.5. Fullerenes 1267 4.6. Coordination and Organometallic Compounds 1271 4.6.1. Metal Dithiolenes 1271 4.6.2. Pyridine-Based Multidentate Ligands 1272 4.6.3. Other Transition-Metal Complexes 1273 4.6.4. Lanthanide Complexes 1275 4.6.5. Ferrocene Derivatives 1275 4.6.6. Alkynylruthenium Complexes 1279 4.6.7. Platinum Acetylides 1279 4.7. Porphyrins and Metallophophyrins 1279 4.8. Nanoparticles 1281 4.9. Biomolecules and Derivatives 1282 5. Nonlinear Optical Characterizations of Multiphoton Active Materials 1282

Multiphoton Absorbing Materials : Molecular Designs, Characterizations, and Applications

CRYSTALLINE MATERIALS Introduction Physical Properties Optical Properties Mechanical Properties Thermal Properties Magnetooptic Properties Electrooptic Properties Elastooptic Properties Nonlinear Optical Properties GLASSES Introduction Commercial Optical Glasses Specialty Optical Glasses Fused Silica Fluoride Glasses Chalcogenide Glasses Magnetooptic Properties Electrooptic Properties Elastooptic Properties Nonlinear Optical Properties Special Glasses POLYMERIC MATERIALS Optical Plastics Index of Refraction Nonlinear Optical Properties Thermal Properties Engineering Data METALS Physical Properties of Selected Metals Optical Properties Mechanical Properties Thermal Properties Mirror Substrate Materials LIQUIDS Introduction Water Physical Properties of Selected Liquids Index of Refraction Nonlinear Optical Properties Magnetooptic Properties Commercial Optical Liquids GASES Introduction Physical Properties of Selected Gases Index of Refraction Nonlinear Optical Properties Magnetooptic Properties Atomic Resonance Filters APPENDICES Safe Handling of Optical Materials Abbreviations, Acronyms, and Mineralogical or Common Names for Optical Materials Abbreviations for Methods of Preparing Optical Materials and Thin Films Fundamental Physical Constants Units and Conversion Factors

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Handbook of Optical Materials

We analyze theoretically the optical properties of ideal semiconductor crystallites so small that they show quantum confinement in all three dimensions [quantum dots (QD's)]. In the limit of a QD much smaller than the bulk exciton size, the linear spectrum will be a series of lines, and we consider the phonon broadening of these lines. The lowest interband transition will saturate like a two-level system, without exchange and Coulomb screening. Depending on the broadening, the absorption and the changes in absorption and refractive index resulting from saturation can become very large, and the local-field effects can become so strong as to give optical bistability without external feedback. The small QD limit is more readily achieved with narrow-band-gap semiconductors.

Theory of the linear and nonlinear optical properties of semiconductor microcrystallites

Excitonic effects in the linear and nonlinear optical properties of single-walled carbon nanotubes are manifested by photoluminescence excitation experiments and ab initio calculations. One- and two-photon spectra showed a series of exciton states; their energy splitting is the fingerprint of excitonic interactions in carbon nanotubes. By ab initio calculations we determine the energies, wave functions, and symmetries of the excitonic states. Combining experiment and theory we find binding energies of $0.3\char21{}0.4\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ for nanotubes with diameters between 6.8 and $9.0\phantom{\rule{0.3em}{0ex}}\mathrm{\AA{}}$.

Exciton binding energies in carbon nanotubes from two-photon photoluminescence

Heterojunction band offset engineering

A single (100) monolayer InAs in GaAs is grown by conventional molecular-beam epitaxy. The structural properties of these highly strained single-monolayer quantum-well samples are investigated with high-resolution double-crystal x-ray diffractometry, double-crystal x-ray reflection topography, and transmission electron microscopy. The calculation of the x-ray-diffraction patterns within the framework of the dynamical diffraction theory provides the precise determination of the strain state and the thickness of the layer even in the submonolayer region. This approach allows us to prove the superior crystalline quality of the samples. In particular, no misfit dislocations are generated at the highly strained InAs/GaAs heterointerface as observed by x-ray topography. These results are confirmed by the high-resolution lattice image of the heterointerface, indicating the excellent homogeneity and flatness of the InAs lattice plane.In addition, we present evidence for a strong impact of the strain on the incorporation of cations in the crystal lattice during epitaxial growth. This structural information on an atomic scale is necessary for a correct interpretation of photoluminescence (PL) and photoluminescence excitation (PLE) spectra. We correlate the results of our structural investigation with a simple analysis of the PL linewidth and the blue shift (Stokes shift) of the heavy-hole exciton resonance in the PLE spectrum with respect to the electron heavy-hole transition in the PL spectrum. Both the PL linewidth and the Stokes shift are explained in terms of a fluctuation of the well width of 1 monolayer and a lateral island size of about 10 nm, in excellent agreement with the lattice image of the structure. The important result of our investigation is that a single monolayer of InAs yields a pronounced redshift of the quantum-well luminescence as compared with that of bulklike GaAs. Additionally, the PLE spectrum provides direct experimental evidence for a weak confinement of the light-hole excitons in the InAs plane. This result clearly indicates a type-I band alignment for both heavy holes and light holes, as predicted by a simple envelope-function calculation. Finally, the samples exhibit a surprisingly high luminescence efficiency, resulting from a very efficient trapping of the photoexcited carriers into the InAs-monolayer quantum well with trapping times of the order of only 20 ps.

Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy.

We have determined the main parameters of the quasi-one-dimensional excitons confined in GaAs V-shaped quantum wires, namely exciton Bohr radius and binding energy, by two-photon absorption and magnetoluminescence experiments. The experimental results are in excellent agreement with our calculations, based on realistic wave functions for the actual wire geometry.

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Exciton binding energy in gaas v-shaped quantum wires

We report a study or the temporal evolution or the luminescence from an electron-hole plasma confined in GaAs quantum wires under high-power excitation. In the spectra ID intersubband transitions with quantum numbers as high as n=5 are resolved. The spectral positions are in excellent agreement with Kohn-Luttinger calculations based on an active wire width or w=60±5nm, accurately determined by an x-ray-diffraction method employed for 1D systems

Quantum confined one-dimensional electron-hole plasma in semiconductor quantum wires

We study the optical transitions and their relation to the crystal potential in ultrathin InAs/GaAs multiple quantum wells. Photoluminescence, photoluminescence excitation, and photoreflectance measurements evidence strong localization of the heavy- and light-hole excitons in submonolayer wide InAs quantum wells. A tight-binding model in the linear-chain approximation explains these results in terms of particle localization at the two-dimensional potential discontinuity produced by the insertion of the InAs plane in the host GaAs matrix.

R. Cingolani

Papers

Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy.

Exciton binding energy in gaas v-shaped quantum wires

Quantum confined one-dimensional electron-hole plasma in semiconductor quantum wires

Exciton localization in submonolayer InAs/GaAs multiple quantum wells.

Electronic states and optical transitions in low-dimensional semiconductors