An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Method of forming insulation film by modified PEALD

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species

In situ concentration monitoring in a vertical OMVPE reactor by fiber-optics-based Fourier transform infrared spectroscopy

Monitoring of gas-phase species in metalorganic vapor phase epitaxy by fiber-optics based Fourier transform infrared spectroscopy

Fiber-based Fourier transform infrared spectroscopy for remote in-situ monitoring of organometallic delivery in organometallic chemical vapor deposition (OMCVD) is presented. The measurement is based on infrared absorbance of the organometallic reagent in a short single pass gas cell placed in the gas delivery line of an OMCVD system. The performance of the set-up is demonstrated for monitoring concentration transients during the delivery of two common OMCVD precursors, trimethylgallium (TMG) and trimethylindium (TMI). The time to reach saturation is shown to be faster for a TMG bubbler than for a TMI bubbler. This difference in delivery behavior is interpreted through a mathematical model of the gas handling lines and the monitoring gas cell. The utility of the system in monitoring temporal variations in TMI delivery is also demonstrated. Finally, the ability of the system to detect the chemical species unintentionally present in the feed lines is illustrated with the observation of methane gas from TMG and TMI bubblers that have been dormant for a period time. The methane gas is shown to quickly disappear with repeated used of the bubblers.

R.D. Driver

Papers

In situ concentration monitoring in a vertical OMVPE reactor by fiber-optics-based Fourier transform infrared spectroscopy

Monitoring of gas-phase species in metalorganic vapor phase epitaxy by fiber-optics based Fourier transform infrared spectroscopy

Fiber optics-based fourier transform infrared spectroscopy for in-situ concentration monitoring in omcvd