Inorganic light-emitting diodes and photodetectors represent important, established technologies for solid-state lighting, digital imaging and many other applications. Eliminating mechanical and geometrical design constraints imposed by the supporting semiconductor wafers can enable alternative uses in areas such as biomedicine and robotics. Here we describe systems that consist of arrays of interconnected, ultrathin inorganic light-emitting diodes and photodetectors configured in mechanically optimized layouts on unusual substrates. Light-emitting sutures, implantable sheets and illuminated plasmonic crystals that are compatible with complete immersion in biofluids illustrate the suitability of these technologies for use in biomedicine. Waterproof optical-proximity-sensor tapes capable of conformal integration on curved surfaces of gloves and thin, refractive-index monitors wrapped on tubing for intravenous delivery systems demonstrate possibilities in robotics and clinical medicine. These and related systems may create important, unconventional opportunities for optoelectronic devices.

Waterproof AlInGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics

System, devices and methods are presented that integrate stretchable or flexible circuitry, including arrays of active devices for enhanced sensing, diagnostic, and therapeutic capabilities. The invention enables conformal sensing contact with tissues of interest, such as the inner wall of a lumen, a the brain, or the surface of the heart. Such direct, conformal contact increases accuracy of measurement and delivery of therapy. Further, the invention enables the incorporation of both sensing and therapeutic devices on the same substrate allowing for faster treatment of diseased tissue and fewer devices to perform the same procedure.

Systems,methods, and devices having stretchable integrated circuitry for sensing and delivering therapy

This paper reviews current technological developments in polarization engineering and the control of the quantum-confined Stark effect (QCSE) for InxGa1- xN-based quantum-well active regions, which are generally employed in visible LEDs for solid-state lighting applications. First, the origin of the QCSE in III-N wurtzite semiconductors is introduced, and polarization-induced internal fields are discussed in order to provide contextual background. Next, the optical and electrical properties of InxGa1- xN-based quantum wells that are affected by the QCSE are described. Finally, several methods for controlling the QCSE of InxGa1- xN-based quantum wells are discussed in the context of performance metrics of visible light emitters, considering both pros and cons. These strategies include doping control, strain/polarization field/electronic band structure control, growth direction control, and crystalline structure control.

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

Provided herein are skin-mounted biomedical devices and methods of making and using biomedical devices for sensing and actuation applications. For example, flexible and/or stretchable biomedical devices are provided, including electronic devices useful for establishing conformal contact with the skin of a subject. Devices disclosed herein can comprise a plurality of sensing and/or actuating devices provided as part of a skin-mounted flexible or stretchable electronic circuit.

Flexible and Stretchable Electronic Systems for Epidermal Electronics

We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting diodes (LEDs). A number of reliability tests are presented, and specific degradation mechanisms of state-of-the-art LED structures are analyzed. In particular, we report recent results concerning the following issues: 1) the degradation of the active layer induced by direct current stress due to the increase in nonradiative recombination; 2) the degradation of LEDs submitted to reverse-bias stress tests; 3) the catastrophic failure of advanced LED structures related to electrostatic discharge events; 4) the degradation of the ohmic contacts of GaN-based LEDs; and 5) the degradation of the optical properties of the package/phosphors system of white LEDs. The presented results provide important information on the weaknesses of LED technology and on the design of procedures for reliability evaluation. Results are compared with literature data throughout the text.

A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

In a practical sense, the development of high-performance visible-spectrum light-emitting diodes (LEDs) has occurred over a period of over 60 years, beginning with the discovery of the first semiconductor p-n junction in 1940, the development of solid-state electronic band theory in the 1940s, the invention of the first bipolar transistor in 1947, and the demonstration of efficient light generation from III-V alloys in the 1950s and 1960s. This paper reviews some of the major scientific and technological developments and observations that have created the materials and device technologies currently used in the commercial mass production of high-brightness visible-spectrum LEDs and that have culminated in white-light sources exhibiting luminous efficacies of over 150 lm/W, far beyond what has been achieved with conventional lighting technologies.

R.D. Dupuis

Papers

History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes