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R. de la Fuente

Researcher at University of Santiago de Compostela

Publications -  14
Citations -  205

R. de la Fuente is an academic researcher from University of Santiago de Compostela. The author has contributed to research in topics: Beam (structure) & Ionic liquid. The author has an hindex of 6, co-authored 14 publications receiving 186 citations. Previous affiliations of R. de la Fuente include University of Castilla–La Mancha.

Papers
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Analytical design of an Offner imaging spectrometer

TL;DR: The analytical design of an imaging spectrometer based on the three-concentric-mirror (Offner) configuration is presented and high-optical-quality spectrometers are obtained without the use of aberration-corrected gratings, even for high speeds.
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Fourier analysis of non-paraxial self-focusing

TL;DR: In this article, a vectorial non-paraxial equation describing the self-focusing of light in a homogeneous isotropic Kerr medium was derived via transformation to the spatial frequency domain, which clarified the physical nature of the approximations made.
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Thermal refraction in ionic liquids induced by a train of femtosecond laser pulses

TL;DR: In this article, the influence of anions and cations on thermal lens strength was investigated for a set of ionic liquids as a function of their structural parameters such as cation, anion type and alkyl chain length in the cation.
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Atomic soliton reservoir: How to increase the critical atom number in negative-scattering-length Bose-Einstein gases

TL;DR: In this article, the stabilization of a large negative scattering length Bose-Einstein condensate by using a multisoliton fringe system was studied, where each fringe behaves like a quasiparticle and the whole cloud formed a stable system when the trapping in one or two directions was switched off.
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Unusual modulation instability in fibers with normal and anomalous dispersions

TL;DR: In this paper, the propagation of an amplitude modulated signal in a nonlinear dispersive single mode fiber is considered in the unusual case where the amplitude of side-bands is highly above that of the carrier.