A survey of the heteroepitaxial growth of semiconductor films on insulating substrates

MBE techniques for IV–VI optoelectronic devices

Photoemission measurements on copper phthalocyanine films were made for photon energies of 7–23 eV. The spectral quantum yield was determined. The energy distribution of the photoemitted electrons for photon energies above 16 eV shows structure characteristic of the density of states. In addition, the attenuation length of electrons photoinjected into copper phthalocyanine was measured. For electrons of approximately 1.5 eV above the vacuum level, the electron‐electron mean free path is estimated to be 11 A.

Photoelectric emission from copper phthalocyanine films

TEM analysis of lead telluride films grown by hot-wall epitaxy on KCI and BaF2

CHAPTER 6 – MBE—Molecular Beam Epitaxial Evaporative Growth

Epitaxial thin films of PbTe have been prepared by vacuum evaporation onto the (001) cleavage face of NaCl with substrate temperatures of 100 and 300 °C and deposition rates of approximately 100 and 1000 A/min, respectively. Electron diffraction showed the films to be strongly oriented with the (001) planes of the deposit parallel to the substrate. Transmission electron microscopy of thinner films, ≈ 0.2μ thick, showed no significant variation in microstructure with changes in substrate temperature and deposition rate. Such films showed a high density of dislocations, ≈ 5×1010/cm2, the majority of which ran normal to the plane of the film. Many were arranged in low‐angle grain boundaries, the most prominent microstructural feature of the films. These exhibited rotations up to about 2° and the average boundary spacing for these thin samples was estimated at 2000 A. Surface replication of a number of films grown with comparable conditions but varying thicknesses show features that could be indicative of int...

R. H. Morriss

Papers

Microstructure and Electrical Properties of Thin Epitaxial Films of PbTe on NaCl