This study presents the electrical properties, complex impedance analysis and dielectrical behavior of La05Ca05−xAgxMnO3 manganites with compositions below the concentration limit of silver solubility in perovskites (0 ≤ x ≤ 02) Transport measurements indicate that all the samples have a semiconductor-like behavior The metal-semiconductor transition is not observed across the whole temperature range explored [80 K–700 K] At a specific temperature, a saturation region was marked in the σ (T) curves We obtained a maximum σdc value at ambient temperature with the introduction of 20% Ag content Two hopping models were applied to study the conduction mechanism We found that activation energy (Ea) related to ac-conductivity is lower than the Ea implicated in dc-conductivity Complex impedance analysis confirms the contribution of grain boundary to conductivity and permits the attribution of grain boundary capacitance evolution to the temperature dependence of the barrier layer width From the temperature dependence of the average normalized change (ANC), we deduce the temperature at which the available density of trapped charge states vanishes Such a temperature is close to the temperature at which the saturation region appears in σ(T) curves Moreover, complex impedance analysis (CIA) indicates the presence of electrical relaxation in materials It is noteworthy that relaxation species such as defects may be responsible for electrical conduction The dielectric behavior of La05Ca05−xAgxMnO3 manganites has a Debye-like relaxation with a sharp decrease in the real part of permittivity at a frequency where the imaginary part of permittivity (e′′) and tg δ plots versus frequency demonstrate a relaxation peak The Debye-like relaxation is explained by Maxwell–Wagner (MW) polarization Experimental results are found to be in good agreement with the Smit and Wijn theory

Conduction mechanism, impedance spectroscopic investigation and dielectric behavior of La0.5Ca0.5-xAgxMnO3 manganites with compositions below the concentration limit of silver solubility in perovskites (0 ≤ x ≤ 0.2).

Polycrystalline LaFe0.9Ni0.1O3 is prepared by the solid state reactions route. X-ray diffraction is used to analyse the phase purity of the compound. Impedance spectra of LaFe0.9Ni0.1O3 over the frequency range of 1?Hz to 10?MHz are investigated at different temperatures from 100 to 373?K. Two relaxation processes with different relaxation times are observed at each temperature. An equivalent circuit model (R1Q1) (R2Q2) is applied to explore the physical parameters associated with grains and grain boundaries. Frequency and temperature dependence of the relaxation processes and extracted parameters are discussed in terms of hopping between Fe+4 and Fe+3 and trap state scattering at grain boundaries. A change in conduction mechanism from variable range hopping to adiabatic small polaron hopping at 296?K is evident from these results. Traps are active below 296?K in capturing the charge.

https://iopscience.iop.org/article/10.1088/0022-3727/43/15/155401/pdf

Investigation of conduction and relaxation phenomena in LaFe 0.9 Ni 0.1 O 3 by impedance spectroscopy

In this paper, we report some physical properties of AgAlP2O7 compound obtained through the standard solid-state reaction technique. AgAlP2O7 has been studied by X-ray diffraction, Raman spectroscopy and impedance spectroscopy. The title compound crystallized at room temperature (T = 300 K) in the monoclinic system with P21/c space group. The electrical properties were studied over a wide range of temperature (440–640 K) in the frequency range of 40 Hz–10 MHz. Study of frequency dependence of AC conductivity suggests that the material obeys the Jonscher’s universal dynamic law. The conductivity is equal to 9.37 × 10−5 Ω cm−1 at 640 K, and it is thermally activated with activation energy of 0.76 eV. The variation of DC conductivity with temperature follows the Arrhenius behavior. The calculated values of s decreased with temperature. This behavior reveals that the conduction mechanism is correlated with barrier hopping. The binding energy W
 m and the hopping distance R
 ω were deduced.

Conductivity study and correlated barrier hopping (CBH) conduction mechanism in diphosphate compound

In the current study, we synthesized a Cu-doped ZnO (CZO) nanoparticles material using a sol-gel method with different doping concentrations of Cu (0, 2, 3 and 4 at.%). The control of the Cu concentration on structural, electrical and optical properties of CZO nanoparticles was investigated in detail. The XRD analysis of the CZO nanoparticles reveals the formation of ZnO hexagonal wurtzite structure for all samples which confirm the incorporation of Cu2+ ions into the ZnO lattice by substitution. Furthermore, CZO nanoparticles showed a small red shift of absorption band with the incorporation of Cu from 0 to 4 at.%; i.e. a decreased band gap value from 3.34 eV to 3.27 eV with increasing of Cu doping content. The frequency dispersion of the electric conductivity were studied using the Jonscher universal power law, according to relation σ(ω) = σDC + A ωs(T). Alternative current conductivity increases with increasing Cu content in spite of the decrease the activation energy with copper loading. It was found that the conductivity reached its maximum value for critical Cu concentration of 3 at.%. The frequency relaxation phenomenon was also investigated and all results were discussed in term of the copper doping concentration.

The optoelectronic properties and role of Cu concentration on the structural and electrical properties of Cu doped ZnO nanoparticles

An La0.6Gd0.1Sr0.3Mn0.75Si0.25O3 ceramic was prepared via a solution-based chemical technique. X-ray diffraction study confirms the formation of the compound in the orthorhombic structure with the Pnma group space. Dielectric properties have been investigated in the temperature range of 85–290 K with the frequency range 40 Hz to 2 MHz. The conductivity spectra have been investigated by the Jonscher universal power law: σ(ω)  =  σdc  +  Aωn, where ω is the frequency of the ac field, and n is the exponent. The deduced exponent ‘n’ values prove that a hopping model is the dominating mechanism in the material. Based on dc-electrical resistivity study, the conduction process is found to be dominated by a thermally activated small polaron hopping (SPH) mechanism. Complex impedance analysis (CIA) indicates the presence of a relaxation phenomenon and allows us to modelize the sample in terms of an electrical equivalent circuit. Moreover, the impedance study confirms the contribution of grain boundaries to the electrical properties.

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Electrical conductivity and dielectric behaviour of nanocrystalline La0.6Gd0.1Sr0.3Mn0.75Si0.25O3

Electrical conductivity and complex impedance analysis of 20% Ti-doped La0.7Sr0.3MnO3 perovskite

Admittance spectroscopy and complex impedance analysis of Ti-modified La0.7Sr0.3MnO3

Titanium effects on the transport properties in La0.7Sr0.3Mn1 − xTixO3

Europium substitution for lanthanium in LaBaMnO – The structural and electrical properties of La0.7−xEuxBa0.3MnO3 perovskite

We have studied the influence of erbium doping on the optical and electrical properties of a Bi4Ti3O12 compound. Bi4−xErxTi3O12 (x = 0.0, 0.1, 0.2 and 0.3) samples are prepared by the solid state reaction method. X-ray diffraction (XRD) revealed that our samples are homogenous and crystallize in the orthorhombic system with the Fmmm space group. Absorbance measurement reveals that the peak intensity increases with increasing erbium concentrations and this behavior confirms the good homogeneity of the samples. DC-conductivity measurements show that all samples are characterized by a semiconductor behavior. It is found that electrical conductivity is reduced considerably with increasing erbium content up to x = 0.3. This is due to the decrease in oxygen vacancy density. For the free compound, dc-conductivity is characterized by the appearance of a saturation region at a specific temperature (Tsat = 480 K). For Er doped compounds, Tsat goes beyond 600 K. An AC-conductivity study shows that the conductivity is governed by the jump relaxation model (JRM) and conduction through grain boundaries. We found that the conductivity spectrum of the investigated materials obeys the Jonscher universal double power law. The deduced activation energy increases when increasing the erbium content from Ea = 467 meV for x = 0 to Ea = 670 meV for x = 0.3. Increasing the Er substitution reduces the frequency dispersion of the real part of the dielectric constant e′. Also, the tan δ plot indicates that the investigated samples exhibit the characteristics of a relaxor dielectric.

/pdf/effect-of-erbium-concentration-on-the-structural-optical-and-58lrrexj1y.pdf

R. Jemai

Papers

Electrical conductivity and complex impedance analysis of 20% Ti-doped La0.7Sr0.3MnO3 perovskite

Admittance spectroscopy and complex impedance analysis of Ti-modified La0.7Sr0.3MnO3

Titanium effects on the transport properties in La0.7Sr0.3Mn1 − xTixO3

Europium substitution for lanthanium in LaBaMnO – The structural and electrical properties of La0.7−xEuxBa0.3MnO3 perovskite

Effect of erbium concentration on the structural, optical and electrical properties of a Bi4Ti3O12 system