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R. Karunanithi

Researcher at Indian Institute of Science

Publications -  58
Citations -  400

R. Karunanithi is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: Pulse tube refrigerator & Level sensor. The author has an hindex of 6, co-authored 55 publications receiving 339 citations.

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CFD analysis and experimental investigations towards optimizing the parameters of Ranque-Hilsch vortex tube

TL;DR: In this article, the authors used computational fluid dynamics (CFD) and experimental studies towards the optimization of the Ranque-Hilsch vortex tubes for obtaining the maximum hot gas temperature and minimum cold gas temperature.
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Investigations into the thermal performance of multilayer insulation (300-77 K) Part 1: Calorimetric studies

TL;DR: In this article, the thermal performance of multilayer insulation (MLI) consisting of double aluminized Mylar radiation shields and nylon net thermal spacers was evaluated using a double guarded cylindrical calorimeter and a tank-calorimeter over the temperature range 300-77 K. The degradation in effective thermal conductivity of MLI was evaluated to be 1.68 using the calorimeters.
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Investigations into the thermal performance of multilayer insulation (300-77 K) Part 2: Thermal analysis

TL;DR: In this article, a simple analytical method has been employed for heat transfer analysis of experimental data obtained through calorimetric investigations on multilayer insulation (MLI), which has shown that the effective thermal conductivity varies from section to section of the insulation structure and it has a peak which lies between the middle and warm boundary regions of the MLI.
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Experimental studies on cool-down and mass flow characteristics of a demountable liquid nitrogen transfer line

TL;DR: A demountable transfer line has been designed and fabricated to carry out experimental studies on cooldown time and mass flow characteristics of a liquid nitrogen transfer line held in a horizontal position.
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Behaviour of power MOSFETs at cryogenic temperatures

TL;DR: In this paper, the authors investigated the suitability of power transistors for cryogenic applications in the range 4.2 -300 K in BSS91 and BSS92 MOSFETs and found that these types of transistors are well suited for operations down to ≈ 30 K. However, below 30 K the operating characteristics make them unsuitable for application.