R
R. L. Lingle
Researcher at University of California, Berkeley
Publications - 6
Citations - 456
R. L. Lingle is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Electron & Femtosecond. The author has an hindex of 6, co-authored 6 publications receiving 455 citations. Previous affiliations of R. L. Lingle include Lawrence Berkeley National Laboratory.
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Journal ArticleDOI
Femtosecond dynamics of electrons on surfaces and at interfaces.
TL;DR: Time- and momentum-resolved two-photon photoemission spectra as a function of layer thickness fully determine the conduction band dynamics at the interface.
Journal ArticleDOI
Femtosecond studies of electron tunneling at metal-dielectric interfaces
R. L. Lingle,R. L. Lingle,Nien-Hui Ge,Nien-Hui Ge,R. E. Jordan,R. E. Jordan,Jason McNeill,Jason McNeill,Charles B. Harris,Charles B. Harris +9 more
TL;DR: In this paper, the authors measured the lifetimes of image potential electrons at alkane mono-and bilayers on Ag(111) and found that the higher quantum states indicate that the presence of the monolayer significantly reduces coupling of the image states to the bulk band structure, so that further changes in lifetime are determined by the adlayer barrier and an attempt rate related to the classical oscillation time in the modified image potential well.
Journal ArticleDOI
Interfacial quantum well states of Xe and Kr adsorbed on Ag(111)
TL;DR: In this paper, the authors measured the energies and dispersions of the image states and quantum well electronic states in layers of Xe and Kr on a Ag(111) substrate using angle-resolved two-photon photoemission (ARTPPE).
Journal ArticleDOI
Dynamics and Spatial Distribution of Electrons in Quantum Wells at Interfaces Determined by Femtosecond Photoemission Spectroscopy
TL;DR: In this article, the dynamics of excited electrons in insulator quantum well states on a metal substrate were determined by femtosecond two-photon photoemission for the first time.
Journal ArticleDOI
Two-dimensional localization of electrons at interfaces.
R. L. Lingle,R. L. Lingle,D. F. Padowitz,D. F. Padowitz,R. E. Jordan,R. E. Jordan,Jason McNeill,Jason McNeill,Charles B. Harris,Charles B. Harris +9 more
TL;DR: These results link the geometry of adlayer molecules with localization of excess electrons at interfaces with evidence for electron localization in 2D at metal-dielectric interfaces is reported.