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R. Penelle

Researcher at University of Paris

Publications -  38
Citations -  921

R. Penelle is an academic researcher from University of Paris. The author has contributed to research in topics: Recrystallization (metallurgy) & Electron backscatter diffraction. The author has an hindex of 18, co-authored 38 publications receiving 846 citations. Previous affiliations of R. Penelle include University of Paris-Sud & École Centrale Paris.

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Recrystallization mechanisms in 5251 H14 and 5251 O aluminum friction stir welds

TL;DR: In this paper, the evolution of the microstructure of two aluminum samples, cold rolled or annealed, is observed from the parent metal to the nugget using electron back-scattered diffraction (EBSD).
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Simulation of normal grain growth by cellular automata

TL;DR: In this paper, the authors combined the way of the Monte Carlo method for microstructure representation with Hesselbarth`s idea of using cellular automata to make the present model as an amended one to simulate grain growth.
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EBSD study of hydrogen-induced cracking in API-5L-X46 pipeline steel

TL;DR: In this paper, the spatial distribution of plastic deformation and grain orientation surrounding hydrogen-induced cracks (HIC) was investigated in samples of API-5L-X46 pipeline steel using scanning electron microscopy and electron backscattering diffraction (EBSD).
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Influence of the Goss grain environment during secondary recrystallisation of conventional grain oriented Fe–3%Si steels

TL;DR: In this paper, anomalous Goss grain growth in a conventional grain oriented Fe-3%Si steel was analyzed using orientation imaging microscopy after several annealing times, and it appears that boundaries misoriented by 20 −45° are not specially mobile during secondary recrystallisation.
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Annealing twin formation and recrystallization study of cold-drawn copper wires from EBSD measurements

TL;DR: In this article, the crystallographic texture and microstructure of an electrolytic tough pitch copper have been investigated by EBSD after cold wire drawing (reduction in area between 52% and 94%) and after primary recrystallization.