R
Radu Barsan
Researcher at Advanced Micro Devices
Publications - 16
Citations - 439
Radu Barsan is an academic researcher from Advanced Micro Devices. The author has contributed to research in topics: Transistor & Oxide. The author has an hindex of 10, co-authored 16 publications receiving 439 citations.
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Patent
CMOS EEPROM cell with tunneling window in the read path
TL;DR: In this paper, a CMOS memory cell including PMOS and NMOS transistors with a common floating gate is presented, which includes a first capacitor connecting a first control voltage to the common floating-gate and a second tunneling capacitor connected from the common fixed gate to the source of the NMOS transistor.
Patent
Method of forming multiple gate oxide thicknesses on a wafer substrate
TL;DR: An integrated circuit device and manufacturing process wherein a first region is formed in a substrate with a dopant that enhances oxide formation and a second region is created in the substrate with the dose of nitrogen that retards oxide formation is described in this paper.
Patent
CMOS memory cell with tunneling during program and erase through the NMOS and PMOS transistors and a pass gate separating the NMOS and PMOS transistors
TL;DR: In this paper, the authors present an NMOS pass gate separating NMOS and PMOS transistors of a CMOS memory cell configured for tunneling during program and erase through the transistors.
Patent
Data retention of EEPROM cell with shallow trench isolation using thicker liner oxide
TL;DR: In this article, a shallow trench isolation structure and a method for forming the same for use with nonvolatile memory devices is provided so as to maintain sufficient data retention of the memory.
Patent
Integrated circuit having, and process providing, different oxide layer thicknesses on a substrate
TL;DR: In this article, an integrated circuit having three different oxide layer thicknesses and a process for manufacturing the IC using a single oxide growth step is provided. But this process requires the IC to be constructed on a substrate surface with a dose of nitrogen that retards oxidation.