R
Rajesh Kumar Malhan
Researcher at Denso
Publications - 53
Citations - 985
Rajesh Kumar Malhan is an academic researcher from Denso. The author has contributed to research in topics: JFET & Silicon carbide. The author has an hindex of 14, co-authored 51 publications receiving 878 citations. Previous affiliations of Rajesh Kumar Malhan include Newcastle University & University of Sheffield.
Papers
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Journal ArticleDOI
A New Integration Method for an Electric Vehicle Wireless Charging System Using LCC Compensation Topology: Analysis and Design
TL;DR: In this article, the authors proposed a new method to integrate the compensated coil into the main coil structure, which not only makes the system more compact, but also the extra coupling effects resulting from the integration are either eliminated or minimized to a negligible level.
Patent
Semiconductor device including a vertical field effect transistor, having trenches, and a diode
Takasumi Ohyanagi,Atsuo Watanabe,Toshio Sakakibara,Tsuyoshi Yamamoto,Hiroki Nakamura,Rajesh Kumar Malhan +5 more
TL;DR: A semiconductor device includes a vertical field effect transistor, a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches formed from a second surface of the semiconductor.
Patent
Power electronic package having two substrates with multiple semiconductor chips and electronic components
TL;DR: In this paper, a power electronic package includes: first and second high thermal conductivity insulating non-planar substrates; and multiple semiconductor chips and electronic components between the substrates.
Proceedings ArticleDOI
Compact Double-Side Liquid-Impingement-Cooled Integrated Power Electronic Module
Christopher Mark Johnson,Cyril Buttay,S.J. Rashidt,Florin Udrea,Gehan A. J. Amaratunga,Peter T. Ireland,Rajesh Kumar Malhan +6 more
TL;DR: In this article, the authors present a compact integrated power electronic module (IPEM) which seeks to overcome the volumetric power density limitations of conventional packaging technologies by using a substrate sandwich structure which permits double side cooling of the embedded dies.
Patent
Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate
TL;DR: In this paper, a method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a trench mask on an upper surface of a semiconductor substrate; forming the trench such that the trench having an aspect ratio equal to or larger than 2 and having a trench slanting angle equal to the angle of the mask.