Atomic Absorption, Atomic Emission, and Flame Emission Spectrometry

An antimicrobial impregnated urinary catheter that reduces mineral encrustation and prevents colonisation by multi-drug resistant organisms for up to 12 weeks.

You don't know much and that's a fact. While this originates from Alice in Wonderland, it adequately describes the feeling at the end of a biennium when 2000+ articles are perused before compiling this review. During the last two years articles have appeared which solved problems that experience and history suggest never were a problem, while other articles present solutions to problems that were thought to be insoluble, new ideas, explanations, and instrumentation push at the frontiers while last year's sparks are still trying to initiate a flame. This reviews covers the fundamentals in the field of atomic absorption, atomic fluorescence, and flame emission spectrometry since the last review and provides selected coverage of applications. The companion reviews entitled Emission Spectrometry and Atomic Mass Spectrometry in this issue should also be consulted for complementary coverage of related topics. The selection criteria for the applications cited in this review reflect the authors' opinion regarding journal availability, appropriate central focus of the article, and novelty of the approach.

Atomic absorption, atomic fluorescence, and flame emission spectrometry

Verunreinigungen von Fremdelementen konnen den Wirkungsgrad von Solarzellen schon im Spurenbereich beeintrachtigen. Die Kenntnis der Verunreinigungen in Si ist entscheidend fur die Produkt- und Produktionskontrolle neuer Solarzellenmaterialien. In dieser Arbeit wurden Analysenmethoden mit unterschiedlichen Messverfahren unter besonderer Berucksichtigung der Anspruche der Solarindustrie entwickelt, verbessert, charakterisiert und verglichen. Mit der Sektorfeld-Massenspektrometrie (SFMS) mit induktiv gekoppeltem Plasma (ICP) nach Matrixabtrennung konnten 22 Elemente mit Bestimmungsgrenzen bis zu 120 pg g−1, quantifiziert werden. Das neue Verfahren erlaubte die Bestimmung aller Elemente in einem Analysengang ohne Analytverlust. Dabei wurde ein bisher in der Literatur nicht beschriebener Mechanismus aufgeklart, welcher die Retention von Bor im Matrixverdampfungsschritt ohne Zusatz von Komplexbildnern erlaubt. Mit der Glimmentladungs-(GD )MS wurden 32 Elemente bis in den sub ng g−1-Bereich bestimmt. Es gelang, relative Empfindlichkeitsfaktoren zur Quantifizierung von B, P, As, Ga, Ge und Fe zu errechnen. Methoden basierend auf der elektrothermischen Verdampfung (ETV), gekoppelt an ICP-MS und ICP-Emissionsspektroskopie (OES) sowie Gleichstrombogen-OES wurden zur Charakterisierung von metallurgischem Si-Pulver mit Gehalten im µg g−1-Bereich verwendet. Die Totalreflexion-Rontgenfluoreszenz wurde als Volumenmessmethode fur die Si-Analytik eingesetzt. Komplettiert wird das Methodenspektrum durch Oberflachenanalytik von Wafern mittels Laserablation-(LA)-ICP-MS. Es wurden erstmalig fur Silicium Konzepte zur quantitativen Bestimmung der Verunreinigungen auf Si-Wafern uber eine Kalibrierung der LA mit eingetrockneten flussigen Standards erarbeitet und gezeigt, dass sich das Verfahren zum Nachweis typischer metallischer Ausscheidungen eignet. Die Neutronenaktivierungsanalyse wurde als anerkannte Referenzmethode der Halbleiterindustrie zur Validierung der Methoden eingesetzt.%%%%Element impurities can affect the efficiency of solar cells already on the trace level. The knowledge of the impurities in Si is thus crucial for the product and production control of new solar cell materials. In this work, analysis methods based on different measurement principles have been developed, improved, characterized and compared with special consideration of the requirements of the solar industry. Sector field mass spectrometry (SFMS) with inductively coupled plasma (ICP) subsequent to matrix separation has been used to determine 22 elements with limits of determination down to 120 pg g−1 on sample basis. The new, optimized procedure allowed the determination of all analytes in one sweep without analyte loss during the evaporation step. A so-far unexplained mechanism for the retention of boron without use of additional complexing agents was elucidated. Glow discharge (GD)MS was used to measure 32 elements down to the sub-ng g−1 range. Relative sensitivity factors for the quantification of B, P, As, Ga, Ge and Fe have been calculated. Methods…

Elementspurenbestimmung in Solarsilicium

A method for the separation and preconcentration of traces of phosphorus from tungsten was developed. Solid phase extraction of the phosphovanadomolybdate complex performed on a micro-column was applied. Phosphorus was determined by optical emission spectroscopy (OES) with inductively coupled plasma (ICP) excitation. A limit of detection of 0.4 μg/g P with respect to the solid phase is obtained. By directly coupling the extraction/elution step to the ICP instrument a detection limit of 0.06 μg/g P in W was achieved. Besides, the complexity of spectral evaluation in ICP-OES determinations of traces in spectralline-rich matrices is discussed.

Extraction inductively coupled plasma-optical emission spectrometry (ICP-OES) determination of traces of phosphorus in tungsten

Indirect atomic absorption spectrometric determination of phosphorus in high purity electronic grade silicon using bismuth phosphomolybdate complex

An improved method for the determination of micro-amounts of phosphorus by atomic absorption spectrometry is described. This technique is not generally applied to the determination of non-metals as their resonance lines fall in the ultraviolet region where atmospheric absorption is a problem. An indirect method using the bismuth-phosphomolybdate complex for the determination of phosphorus is suggested. As bismuth and phosphorus are present in a 1:1 stoicheiometric ratio, the phosphorus content can be correlated with the concentration of bismuth. The condition for the formation of the complex, its extraction with isobutyl methyl ketone and the determintion of phosphorus in solution by utilising the 223.06-nm resonance line of bismuth are discussed.

Ramadevi Ramchandran

Papers

Indirect atomic absorption spectrometric determination of phosphorus in high purity electronic grade silicon using bismuth phosphomolybdate complex

Atomic absorption spectrometric method for the determination of phosphorus using the bismuth-phosphomolybdate complex