日本物理学会誌及びJournal of the Physical Society of Japanの月刊について

Annual review of condensed matter physics

Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on the outside. It also implies that if information was stored in antiferromagnetic moments it would be insensitive to disturbing external magnetic fields, and the antiferromagnetic element would not affect magnetically its neighbors no matter how densely the elements were arranged in a device. The intrinsic high frequencies of antiferromagnetic dynamics represent another property that makes antiferromagnets distinct from ferromagnets. The outstanding question is how to efficiently manipulate and detect the magnetic state of an antiferromagnet. In this article we give an overview of recent works addressing this question. We also review studies looking at merits of antiferromagnetic spintronics from a more general perspective of spin-ransport, magnetization dynamics, and materials research, and give a brief outlook of future research and applications of antiferromagnetic spintronics.

Antiferromagnetic spintronics

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics and are capable of generating large magneto-transport effects Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed Antiferromagnetic spintronics started out with studies on spin transfer, and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics Central to these endeavors are the need for predictive models, relevant disruptive materials and new experimental designs This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials It also details some of the remaining bottlenecks and suggests possible avenues for future research

Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7-11 based on atomically thin van der Waals crystals.

Gate-tunable room-temperature ferromagnetism in two-dimensional Fe 3 GeTe 2 .

Topological electronics has extended its richness to nonelectronic systems where bosonic quasiparticles can play the role of spin and heat carriers. In particular, topological magnons can be enabled by the Dzyaloshinskii-Moriya interaction (DMI) which acts as an effective spin-orbit coupling. We show that, besides DMI, an alternating arrangement of Heisenberg exchange interactions critically determines the magnon band topology, realizing a magnonic analog of the Su-Schrieffer-Heeger model. On a honeycomb ferromagnet with perpendicular anisotropy, we calculate the topological phase diagram, the chiral edge states, and the associated magnon Hall effect with tunable relative strength of exchange interactions on different links. Including weak phonon-magnon hybridization does not change the result. Candidate materials are discussed.

Magnonic Su-Schrieffer-Heeger model in honeycomb ferromagnets

Magnon excitations in antiferromagnetic materials and their physical implications have helped to facilitate the emergence of device concepts not presently available in ferromagnets. A unique characteristic of antiferromagnetic magnons is the coexistence of opposite spin polarization, which mimics the electron spin in a variety of transport phenomena. Among them, the most prominent spin-contrasting phenomenon is the magnon spin Nernst effect (SNE), which refers to the generation of a transverse pure magnon spin current through a longitudinal temperature gradient. We introduce selected recent progress in the study of magnon SNE in collinear antiferromagnets with focus on its underlying physical mechanism entailing profound topological features of magnon band structures. By reviewing how the magnon SNE has inspired and enriched the exploration of topological magnons, we offer our perspective on this emerging frontier that holds potential in future spintronic nano-technology.

https://aip.scitation.org/doi/10.1063/5.0084359

A perspective on magnon spin Nernst effect in antiferromagnets

Spintronics is the study of mutual dependence of magnetization and electron transport, which forms a complementary picture in ferromagnetic (FM) materials. Recently, spintronics based on antiferromagnetic (AF) materials has been suggested. However, a systematic study is not yet available, and a complementary picture of the AF dynamics with electron transport is highly desired. By developing a microscopic theory, we predict the occurrence of spintronic phenomena both in bulk AF texture and on the interface of AF with normal metals. For the bulk, we find that the electron dynamics becomes adiabatic when the local staggered field is varying slowly over space and time, by which the spin-motive force and the reactive spin-transfer torque (STT) are derived as reciprocal effects. While the former generates a pure spin voltage across the texture, the latter can be used to drive AF domain wall and trigger spin wave excitation with lower current densities compared to FM materials. For the interface, by calculating how electrons scatter off a normal metal -antiferromagnet heterostructure, we derive the pumped spin and staggered spin currents in terms of the staggered order parameter, the magnetization, and their rates of change; the reactions of an incident spin current on the antiferromagnet is derived as STTs. These effects are applicable to both compensated and uncompensated interfaces with a similar order of magnitude. In contrast to FM materials, the direction of spin pumping is controlled by the circular polarization of driving microwave; and conversely, the chirality of AF spin wave is tunable by the direction of spin accumulation.

Aspects of antiferromagnetic spintronics

By exploiting proximity coupling, we probe the spin state of the surface layers of CrI3, a van der Waals magnetic semiconductor, by measuring the induced magnetoresistance (MR) of Pt in Pt/CrI3 nano-devices. We fabricate the devices with clean and stable interfaces by placing freshly exfoliated CrI3 flake atop pre-patterned thin Pt strip and encapsulating the Pt/CrI3 heterostructure with hexagonal boron nitride (hBN) in a protected environment. In devices consisting of a wide range of CrI3 thicknesses (30 to 150 nm), we observe that an abrupt upward jump in Pt MR emerge at a 2 T magnetic field applied perpendicularly to the layers when the current density exceeds 2.5x10^10 A/m2, followed by a gradual decrease over a range of 5 T. These distinct MR features suggest a spin-flop transition which reveals strong antiferromagnetic interlayer coupling in the surface layers of CrI3. We study the current dependence by holding the Pt/CrI3 sample at approximately the same temperature to exclude the joule heating effect, and find that the MR jump increases with the current density, indicating a spin current origin. This spin current effect provides a new route to control spin configurations in insulating antiferromagnets, which is potentially useful for spintronic applications.

Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt

Angular-momentum conservation has served as a guiding principle in the interplay between spin dynamics and mechanical rotations. However, in an antiferromagnet with vanishing magnetization, new fundamental rules are required to properly describe spin-mechanical phenomena. Here we show that the N\'eel order dynamics affects the mechanical motion of a rigid body by modifying its inertia tensor in the presence of strong magnetocrystalline anisotropy. This effect depends on temperature when magnon excitations are considered. Such a spin-mechanical inertia can produce measurable consequences at small scales.

Ran Cheng

Papers

Magnonic Su-Schrieffer-Heeger model in honeycomb ferromagnets

A perspective on magnon spin Nernst effect in antiferromagnets

Aspects of antiferromagnetic spintronics

Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt

Spin-mechanical inertia in antiferromagnets