We review work on In2O3:Sn films prepared by reactive e‐beam evaporation of In2O3 with up to 9 mol % SnO2 onto heated glass. These films have excellent spectrally selective properties when the deposition rate is ∼0.2 nm/s, the substrate temperature is ≳150 °C, and the oxygen pressure is ∼5×10−4 Torr. Optimized coatings have crystallite dimensions ≳50 nm and a C‐type rare‐earth oxide structure. We cover electromagnetic properties as recorded by spectrophotometry in the 0.2–50‐μm range, by X‐band microwave reflectance, and by dc electrical measurements. Hall‐effect data are included. An increase of the Sn content is shown to have several important effects: the semiconductor band gap is shifted towards the ultraviolet, the luminous transmittance remains high, the infrared reflectance increases to a high value beyond a certain wavelength which shifts towards the visible, phonon‐induced infrared absorption bands vanish, the microwave reflectance goes up, and the dc resisitivity drops to ∼2×10−4 Ω cm. The corre...

Evaporated Sn‐doped In2O3 films: Basic optical properties and applications to energy‐efficient windows

Materials research plays a vital role in transforming breakthrough scientific ideas into next-generation technology. Similar to the way silicon revolutionized the microelectronics industry, the proper materials can greatly impact the field of plasmonics and metamaterials. Currently, research in plasmonics and metamaterials lacks good material building blocks in order to realize useful devices. Such devices suffer from many drawbacks arising from the undesirable properties of their material building blocks, especially metals. There are many materials, other than conventional metallic components such as gold and silver, that exhibit metallic properties and provide advantages in device performance, design flexibility, fabrication, integration, and tunability. This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent conducting oxides, perovskite oxides, metal nitrides, silicides, germanides, and 2D materials such as graphene. This review provides a summary of the recent developments in the search for better plasmonic materials and an outlook of further research directions.

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Alternative Plasmonic Materials: Beyond Gold and Silver

Tin doped indium oxide (ITO) films are highly transparent in the visible region, exhibiting high reflectance in the infrared region, and having nearly metallic conductivity. Owing to this unusual combination of electrical and optical properties, this material is widely applied in optoelectronic devices. The association of these properties in a single material explains the vast domain of its applicability and the diverse production methods which have emerged. Although the different properties of tin doped indium oxide in the film form are interdependent, this article mainly focuses on the electrical aspects. Detailed description of the conduction mechanism and the main parameters that control the conductivity is presented. On account of the large varieties and differences in the fabrication techniques, the electrical properties of ITO films are discussed and compared within each technique.

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Tin doped indium oxide thin films: Electrical properties

Despite the relatively low efﬁciencyin comparison with conventional inorganic solar cells, thepotential of roll-to-roll processing and large-area processa-bility on ﬂexible low-cost substrates renders conjugatedpolymer-based organic solar cells (OSCs) very attractive asa cost-effective solution to the problem of energy shortage.Among the available BHJ systems, poly(3-hexylthiophene)(P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C

Efficient and Flexible ITO‐Free Organic Solar Cells Using Highly Conductive Polymer Anodes

We demonstrate the improvement of an indium tin oxide anode contact to an organic light emitting device via oxygen plasma treatment. Enhanced hole-injection efficiency improves dramatically the performance of single-layer doped-polymer devices: the drive voltage drops from >20 to <10 V, the external electroluminescence quantum efficiency (backside emission only) increases by a factor of 4 (from 0.28% to 1%), a much higher drive current can be applied to achieve a much higher brightness (maximum brightness ∼10,000 cd/m2 at 1000 mA/cm2), and the forward-to-reverse bias rectification ratio increases by orders of magnitude (from 102 to 106–107). The lifetime of the device is also enhanced by two orders of magnitude.

Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices

Spin pumping is a key property for spintronic application that can be realized in heavy metal/ferromagnet bilayers. Here we demonstrate the possibility of improving spin pumping in permalloy (Py)/tantalum (Ta) bilayers through control of Ta heavy metal deposition temperature. Through a combination of structural and ferromagnetic resonance based magnetization dynamics study, we reveal the role of Ta deposition temperature in improving spin mixing conductance which is a key parameter for spin pumping across the Py/Ta interface. The results show that by depositing Ta above room temperature, a high spin mixing conductance of 7.7 ×1018 m−2 is obtained with α-Ta layer. The results present an understanding of the correlation between heavy metal deposition temperature and interface structure improvement and consequent control of spin pumping in Py/Ta bilayers.

Heavy metal deposition temperature tuned spin pumping efficiency control in permalloy/tantalum bilayers

Light induced effects in hydrogenated amorphous silicon for different temperatures of light soaking were measured. The dark conductivity, photoconductivity and photoluminescence of the samples were measured prior to and after light soaking. The aim of this work is two-fold. One is to attempt to get a picture of the relative distributions of defect states for the films for different light soaking temperatures. The other is to check if the metastable effect is essentially a function of the soaking temperature alone or it depends upon the treatment history of the samples. Experimental results are explained by a conventional co-ordinate diagram taking into account the rate equation for the metastable defect formation, which involves both creation and annealing activation energies.

Ratnabali Banerjee

Papers

Heavy metal deposition temperature tuned spin pumping efficiency control in permalloy/tantalum bilayers

Effect of Light Soaking Temperature on the Metastable Defect Distribution in Magnetron Sputtered Hydrogenated Amorphous Silicon Films