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Ratnabali Banerjee

Researcher at Indian Association for the Cultivation of Science

Publications -  42
Citations -  849

Ratnabali Banerjee is an academic researcher from Indian Association for the Cultivation of Science. The author has contributed to research in topics: Thin film & Amorphous silicon. The author has an hindex of 10, co-authored 41 publications receiving 829 citations.

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Some properties of indium- and antimony-doped vacuum-evaporated CdS thin films

TL;DR: In this article, the effects of doping of vacuum-evaporated CdS thin films with indium and antimony were studied and the properties specifically studied are (1) the dark conductivity and photoconductivity as functions of temperature and dopant concentration, (2) the Hall mobility and carrier concentration at room temperature, (3) the thermally stimulated current and (4) the spectral response and optical density.
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Hydrogenated amorphous silicon films prepared at high substrate temperature: Properties and light induced degradation

TL;DR: In this article, a detailed study was done to evaluate a•Si:H materials deposited at high substrate temperatures (≥325 °C) and their characteristics and nature of light induced degradation were compared to a• Si:H deposited at 200 Ã −C. The results have been discussed in connection with the role of hydrogen motion in the annealing of lightinduced defects.
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Properties of hydrogenated amorphous SiN films prepared by r.f. magnetron sputtering with emphasis on the non-stoichiometric region

TL;DR: In this article, the results of optical absorption, IR absorption, Raman scattering and conductivity measurements for hydrogenated amorphous SiN films (a-Si1−xNx:H) prepared by r.f. magnetron sputtering have been presented.
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Laser-induced structural changes in magnetron-sputtered hydrogenated microcrystalline silicon films.

TL;DR: L'etude TEM revele une augmentation de the phase amorphe pour des expositions laser dans la gamme des puissances ou l'on observe l'attenuation du mode de phonons, avec un renforcement subsequent of the cristallinite pour des puISSances superieures.
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Efficient boron incorporation in hydrogenated amorphous silicon films by a novel combination of RF glow discharge technique and heated filament

TL;DR: In this article, a combination of Raman scattering experiment and infrared (IR) vibrational spectroscopy was performed to study the structural characteristics of the a-Si:H films and it was inferred that growth conditions mainly governed by BH3 radicals led to highly conducting films.