Showing papers by "Reginald K. Lee published in 1997"
Patent•
12 Dec 1997TL;DR: In this paper, a semiconductor light-emitting device having one or more depletion regions that are controlled by control electrodes to vary the spatial distribution of the carriers in an active layer is presented.
Abstract: A semiconductor light-emitting device having one or more depletion regions that are controlled by one or more control electrodes to vary the spatial distribution of the carriers in an active layer. The voltages on the control electrodes can be controlled to modulate the current density in the active layer and the output light intensity. The polarization of a surface emitting diode laser based on this device can be controlled or modulated.
30 citations
18 May 1997
TL;DR: In this article, the authors describe the incorporation of a micro-fabricated two-dimensional photonic lattice in an edge-emitting semiconductor laser structure, and demonstrate the laser operation in a cavity formed between a cleaved facet and a micro fabricated periodic lattice.
Abstract: Photonic bandgap crystals are expected to be
of use in defining microcavities for modifying
spontaneous emission and as highly reflective
mirrors. There are several reports of microfabricating
one-dimensional structure. Here, we describe the incorporation of a microfabricated two-dimensional photonic lattice in an edge-emitting semiconductor laser structure.
We demonstrate laser operation in a cavity formed between a cleaved facet and a microfabricated periodic lattice.
4 citations
TL;DR: In this paper, a ridge waveguide, edge-emitting single quantum well GaAs laser with an integrated gating electrode has been fabricated using an anisotropic etch for waveguide definition followed by a single selfaligned contact deposition step.
Abstract: Ridge waveguide, edge-emitting single quantum well GaAs lasers with an integrated gating electrode have been fabricated. These devices integrate a MESFET structure with the laser PN junction so that the SBD (Schottky barrier diode) depletion layer can be used for transverse current confinement in the laser. Device fabrication was very simple requiring only an anisotropic etch for waveguide definition followed by a single self-aligned contact deposition step. The Schottky barrier depletion layers on either side of the ridge waveguide act to confine free carriers. This structure allows for separation of the optical and electrical confinement in the transverse direction without requiring complex fabrication. The device demonstrated modulation of the pulsed lasing threshold with gate control voltage on a 30 micron wide ridge. Above threshold, increasing power output with increasing gate voltage was demonstrated with negligible gate current. The multimode lasing spectrum showed that the increased power output occurred for all modes with no shift in the mode wavelengths to within the resolution of the measurement system.
10 Nov 1997
TL;DR: In this article, the state-of-the-art in four-wave mixing (FWM) based wavelength conversion is reviewed and some interesting quantum-well physics that can now be probed by way of four wave mixing spectroscopy.
Abstract: We review the current state-of-the-art in four-wave mixing (FWM) based wavelength conversion as well as describing some of the interesting quantum-well physics that can now be probed by way of four-wave mixing spectroscopy. The FWM wavelength conversion process is shown schematically. An input signal that is carrying base band digital data is mixed with a pump wave in a semiconductor optical amplifier (SOA) and thereby generates a phase conjugate replica at a new frequency. Eye diagram analysis and bit error rate (BER) measurements for varying amounts of wavelength shift are presented, including results for record wavelength shifts by this technique.