R
Renan Bonnard
Researcher at SENAI
Publications - 24
Citations - 304
Renan Bonnard is an academic researcher from SENAI. The author has contributed to research in topics: STEP-NC & Industry 4.0. The author has an hindex of 8, co-authored 20 publications receiving 188 citations. Previous affiliations of Renan Bonnard include University of Brasília.
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STEP-NC digital thread for additive manufacturing: data model, implementation and validation
TL;DR: A new STEP-NC data model for AM technologies developed with the ISO TC184/SC1/WG7 committee is presented and allows integration of several optimisation and simulation modules that extend the possibility of advanced and intelligent AM, for instance in-process manufacturing optimisation.
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Data model for additive manufacturing digital thread: state of the art and perspectives
TL;DR: The past and current research for a state-of-the-art data model digital thread, as well as perspectives and recommendations for a performing data model thread adapted to the different needs of the AM community are presented.
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Hierarchical object-oriented model (HOOM) for additive manufacturing digital thread
TL;DR: A methodology for the development of a new AM digital chain model, named the Hierarchical Object-Oriented Model (HOOM), based entirely on object-oriented modeling that uses a collection of objects containing stored values of the instance variables found within an object.
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A new digital chain for additive manufacturing processes
TL;DR: In this paper, the authors proposed to integrate the additive manufacturing processes in a complete STEP-NC digital chain in accordance with the norm work group committee ISO TC 184/SC 1.
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Optimizing additive manufacturing parameters for the fused deposition modeling technology using a design of experiments
Luiz Fernando C. S. Durão,Richard Barkoczy,Eduardo de Senzi Zancul,Linda Lee Ho,Renan Bonnard +4 more
TL;DR: Results indicate that print speed and the number of contours are the most important factors for the quality of the final part of the FDM process studied, and the factors presented could be extended for AM technologies.