R
Riadh Hajlaoui
Researcher at Centre national de la recherche scientifique
Publications - 15
Citations - 2222
Riadh Hajlaoui is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Field-effect transistor & Electron mobility. The author has an hindex of 15, co-authored 15 publications receiving 2172 citations.
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Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors
TL;DR: In this paper, a method was developed to extract the carrier mobility from an analysis of the transfer characteristics of polycrystalline sexithiophene (6 T) transistors at temperatures ranging from 10 to 300 K.
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Gate voltage dependent mobility of oligothiophene field-effect transistors
TL;DR: In this article, a method was developed to estimate the field effect mobility of organic field effect transistors for the contact series resistance, which was found to increase by a factor of nearly 100 from quaterthiophene to octithiophene.
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The Concept of “Threshold Voltage” in Organic Field‐Effect Transistors
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Field‐effect transistor made with a sexithiophene single crystal
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Temperature Dependence of the Field-Effect Mobility of Sexithiophene. Determination of the Density of Traps
TL;DR: In this article, the conductivite and mobilite d'effet de champ du sexithiopheme non substitue (6T) and du di-alkyl-sexithiophene substitue en bout de chaine (DH6T), ont ete mesurees en fonction de la temperature.