This article reviews the current status of lattice-dynamical calculations in crystals, using density-functional perturbation theory, with emphasis on the plane-wave pseudopotential method. Several specialized topics are treated, including the implementation for metals, the calculation of the response to macroscopic electric fields and their relevance to long-wavelength vibrations in polar materials, the response to strain deformations, and higher-order responses. The success of this methodology is demonstrated with a number of applications existing in the literature.

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Phonons and related crystal properties from density-functional perturbation theory

Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.

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Raman spectroscopy as a versatile tool for studying the properties of graphene

BACKGROUND Materials by design is an appealing idea that is very hard to realize in practice. Combining the best of different ingredients in one ultimate material is a task for which we currently have no general solution. However, we do have some successful examples to draw upon: Composite materials and III-V heterostructures have revolutionized many aspects of our lives. Still, we need a general strategy to solve the problem of mixing and matching crystals with different properties, creating combinations with predetermined attributes and functionalities. ADVANCES Two-dimensional (2D) materials offer a platform that allows creation of heterostructures with a variety of properties. One-atom-thick crystals now comprise a large family of these materials, collectively covering a very broad range of properties. The first material to be included was graphene, a zero-overlap semimetal. The family of 2D crystals has grown to includes metals (e.g., NbSe 2 ), semiconductors (e.g., MoS 2 ), and insulators [e.g., hexagonal boron nitride (hBN)]. Many of these materials are stable at ambient conditions, and we have come up with strategies for handling those that are not. Surprisingly, the properties of such 2D materials are often very different from those of their 3D counterparts. Furthermore, even the study of familiar phenomena (like superconductivity or ferromagnetism) in the 2D case, where there is no long-range order, raises many thought-provoking questions. A plethora of opportunities appear when we start to combine several 2D crystals in one vertical stack. Held together by van der Waals forces (the same forces that hold layered materials together), such heterostructures allow a far greater number of combinations than any traditional growth method. As the family of 2D crystals is expanding day by day, so too is the complexity of the heterostructures that could be created with atomic precision. When stacking different crystals together, the synergetic effects become very important. In the first-order approximation, charge redistribution might occur between the neighboring (and even more distant) crystals in the stack. Neighboring crystals can also induce structural changes in each other. Furthermore, such changes can be controlled by adjusting the relative orientation between the individual elements. Such heterostructures have already led to the observation of numerous exciting physical phenomena. Thus, spectrum reconstruction in graphene interacting with hBN allowed several groups to study the Hofstadter butterfly effect and topological currents in such a system. The possibility of positioning crystals in very close (but controlled) proximity to one another allows for the study of tunneling and drag effects. The use of semiconducting monolayers leads to the creation of optically active heterostructures. The extended range of functionalities of such heterostructures yields a range of possible applications. Now the highest-mobility graphene transistors are achieved by encapsulating graphene with hBN. Photovoltaic and light-emitting devices have been demonstrated by combining optically active semiconducting layers and graphene as transparent electrodes. OUTLOOK Currently, most 2D heterostructures are composed by direct stacking of individual monolayer flakes of different materials. Although this method allows ultimate flexibility, it is slow and cumbersome. Thus, techniques involving transfer of large-area crystals grown by chemical vapor deposition (CVD), direct growth of heterostructures by CVD or physical epitaxy, or one-step growth in solution are being developed. Currently, we are at the same level as we were with graphene 10 years ago: plenty of interesting science and unclear prospects for mass production. Given the fast progress of graphene technology over the past few years, we can expect similar advances in the production of the heterostructures, making the science and applications more achievable.

2D materials and van der Waals heterostructures

Ever since its discovery, the Berry phase has permeated through all branches of physics. Over the last three decades, it was gradually realized that the Berry phase of the electronic wave function can have a profound effect on material properties and is responsible for a spectrum of phenomena, such as ferroelectricity, orbital magnetism, various (quantum/anomalous/spin) Hall effects, and quantum charge pumping. This progress is summarized in a pedagogical manner in this review. We start with a brief summary of necessary background, followed by a detailed discussion of the Berry phase effect in a variety of solid state applications. A common thread of the review is the semiclassical formulation of electron dynamics, which is a versatile tool in the study of electron dynamics in the presence of electromagnetic fields and more general perturbations. Finally, we demonstrate a re-quantization method that converts a semiclassical theory to an effective quantum theory. It is clear that the Berry phase should be added as a basic ingredient to our understanding of basic material properties.

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Berry phase effects on electronic properties

Preface Acknowledgements Notation Part I. Overview and Background Topics: 1. Introduction 2. Overview 3. Theoretical background 4. Periodic solids and electron bands 5. Uniform electron gas and simple metals Part II. Density Functional Theory: 6. Density functional theory: foundations 7. The Kohn-Sham ansatz 8. Functionals for exchange and correlation 9. Solving the Kohn-Sham equations Part III. Important Preliminaries on Atoms: 10. Electronic structure of atoms 11. Pseudopotentials Part IV. Determination of Electronic Structure, The Three Basic Methods: 12. Plane waves and grids: basics 13. Plane waves and grids: full calculations 14. Localized orbitals: tight binding 15. Localized orbitals: full calculations 16. Augmented functions: APW, KKR, MTO 17. Augmented functions: linear methods Part V. Predicting Properties of Matter from Electronic Structure - Recent Developments: 18. Quantum molecular dynamics (QMD) 19. Response functions: photons, magnons ... 20. Excitation spectra and optical properties 21. Wannier functions 22. Polarization, localization and Berry's phases 23. Locality and linear scaling O (N) methods 24. Where to find more Appendixes References Index.

Electronic Structure: Basic Theory and Practical Methods

We introduce a method for the solution of the electronic-structure problem in the independent-electron approximation The method is based upon a variational solution for the density matrix, which is truncated to zero beyond a real-space radius ${\mathit{R}}_{\mathit{c}}$, and becomes exact as ${\mathit{R}}_{\mathit{c}}$\ensuremath{\rightarrow}\ensuremath{\infty} Most importantly, the computer time scales only linearly with system size The method is tested in the context of tight-binding models in one and three dimensions

Density-matrix electronic-structure method with linear system-size scaling.

A perturbation theory of the static response of insulating crystals to homogeneous electric fields that combines the modem theory of polarization (MTP) with the variation-perturbation framework is developed at unrestricted order of perturbation. First, we address conceptual issues related to the definition of such a perturbative approach. In particular, in our definition of an electric-field-dependent energy functional for periodic systems, the position operator appearing in the perturbation term is replaced by a Berry-phase expression, along the lines of the MTP. Moreover, due to the unbound nature of the perturbation, a regularization of the Ferry-phase expression for the polarization is needed in order to define a numerically stable variational procedure. Regularization is achieved by means of discretization, which can be performed either before or after the perturbation expansion. We compare the two possibilities and apply them to a model tight-binding Hamiltonian. Lowest-order as well as generic formulas are presented for the derivatives of the total energy, the normalization condition, the eigenequation, and the Lagrange parameters.

https://arxiv.org/pdf/cond-mat/0101344.pdf

Berry-phase treatment of the homogeneous electric field perturbation in insulators

We present a generalization of the Li, Nunes, and Vanderbilt density-matrix method to the case of a nonorthogonal set of basis functions. A representation of the real-space density matrix is chosen in such a way that only the overlap matrix, and not its inverse, appears in the energy functional. The generalized energy functional is shown to be variational with respect to the elements of the density matrix, which typically remains well localized.

Generalization of the density-matrix method to a nonorthogonal basis.

Mario S. C. Mazzoni,1 R. W. Nunes,1,* Sergio Azevedo,1,2 and H. Chacham1,† 1Departamento de Fisica, ICEX, Universidade Federal de Minas Gerais, CP 702, 30123-970, Belo Horizonte, MG, Brazil 2Departamento de Fisica, Universidade Estadual de Feira de Santana, Km 3 BR-116, 44031-460, Feira de Santana, BA, Brazil Received 23 November 2005; revised manuscript received 10 January 2006; published 27 February 2006

Electronic structure and energetics ofBxCyNzlayered structures

We suggest that the commonly accepted core structure of the 90 ‐ partial dislocation in Si may not be correct, and propose instead a period-doubled structure. We present local-density approximation, tightbinding, and classical Keating-model calculations, all of which indicate that the period-doubled structure is lower in energy. The new structure displays a broken mirror symmetry in addition to the period doubling, leading to a wide variety of possible solitonlike defects and kinks. [S0031-9007(97)03552-7]

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Ricardo Nunes

Papers

Density-matrix electronic-structure method with linear system-size scaling.

Berry-phase treatment of the homogeneous electric field perturbation in insulators

Generalization of the density-matrix method to a nonorthogonal basis.

Electronic structure and energetics ofBxCyNzlayered structures

Period-doubled structure for the 90 partial dislocation in silicon