R
Richard A. Blanchard
Researcher at STMicroelectronics
Publications - 49
Citations - 586
Richard A. Blanchard is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Layer (electronics) & Transistor. The author has an hindex of 14, co-authored 49 publications receiving 586 citations.
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Patent
Trench MOS-gated device with a minimum number of masks
TL;DR: In this article, a lowvoltage high-current discrete insulated-gate field effect transistor with two silicon etches is presented, where the source diffusion is provided by an unmasked implant which is screened only by various grown oxides.
Patent
High voltage termination with buried field-shaping region
TL;DR: In this article, a semiconductor device structure and method for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region is presented, where a region of second conductivity is located a predetermined distance away from the device region.
Patent
Fully-dielectric-isolated FET technology
TL;DR: In this paper, a field effect transistor (FET) is defined, where a single patterned thin film semiconductor layer: is monocrystalline, and epitaxially matched to and dielectrically isolated from an underlying body region, in channel locations; and is polycrystalline in source/drain locations which abut said channel locations.
Patent
Method for forming a semiconductor structure with self-aligned contacts
TL;DR: In this paper, dual-doped polysilicon local interconnect structures and processes using dual-dual-polysilicon are described. And a single implant is used to enhance the doping of the PMOS drain regions and also add to the source regions to provide source/drain asymmetry.
Patent
Structure and process for reducing the on-resistance of mos-gated power devices
TL;DR: In this paper, a VDMOS structure with an added n- doping component, and a LOCOS oxide self-aligned to it, at the surface extension of the drain, is presented.