Patent
High voltage termination with buried field-shaping region
TLDR
In this article, a semiconductor device structure and method for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region is presented, where a region of second conductivity is located a predetermined distance away from the device region.Abstract:
A semiconductor device structure and method are presented for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region. The structure includes a region of second conductivity type in the substrate completely buried in the substrate below and separated from the device region. The region of second conductivity type is located a predetermined distance away from the device region. The distance is sufficient to permit a depletion region to form between the region of second conductivity type and the device region, when a first voltage is applied between the device region and the substrate. The distance also is determined to produce a radius of curvature of the depletion region, when a second voltage that is larger than the first voltage is applied between the device region and the substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if the region of second conductivity type were not present. Traditional field shaping regions spaced from the device region at a surface of the substrate and spaced from the region of second conductivity type may be used in conjunction with the buried ring, if desired.read more
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Patent
Power semiconductor devices and methods of manufacture
Ashok Challa,Alan Elbanhawy,Thomas E. Grebs,Nathan Kraft,Dean E. Probst,Rodney S. Ridley,Steven Sapp,Qi Wang,Chongman Yun,J.G. Lee,Peter H. Wilson,Joseph A. Yedinak,J.Y. Jung,Hocheol Jang,Babak S. Sani,Richard Stokes,Gary M. Dolny,John Mytych,Becky Losee,Adam Selsley,Robert Herrick,James J. Murphy,Gordon K. Madson,Bruce D. Marchant,Christopher L. Rexer,Christopher Boguslaw Kocon,Debra S. Woolsey +26 more
TL;DR: In this article, a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance.
Patent
Dual trench power MOSFET
TL;DR: In this paper, a MOSFET includes a first semiconductor region of a first conductivity type, a gate trench which extends into the first semiconductors region, and a source trench, which is laterally spaced from the gate trench.
Patent
Superjunction Structures for Power Devices and Methods of Manufacture
Joseph A. Yedinak,Christopher L. Rexer,Mark L. Rinehimer,Praveen Muraleedharan Shenoy,Jaegil Lee,Hamza Yilmaz,Chong-Man Yun,Dwayne S. Reichl,James Pan,Rodney S. Ridley,Harold Heidenreich +10 more
TL;DR: A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type as discussed by the authors, and each of the plurality of pillars of second conductivities type further includes an implant portion filled with semiconductor material.
Patent
Trench-based power semiconductor devices with increased breakdown voltage characteristics
Joseph A. Yedinak,Ashok Challa +1 more
TL;DR: Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed in this article, where the authors present a comparison of different types of power semiconductors with different benefits.
Patent
Methods of making power semiconductor devices with thick bottom oxide layer
Ashok Challa,Alan Elbanhawy,Dean E. Probst,Steven Sapp,Peter H. Wilson,Babak S. Sani,Becky Losee,Robert Herrick,James J. Murphy,Gordon K. Madson,Bruce D. Marchant,Christopher Boguslaw Kocon,Debra S. Woolsey +12 more
TL;DR: In this paper, a conformal oxide film is used to fill the bottom of a trench formed in a semiconductor substrate and cover a top surface of the substrate, and then the oxide film can be etched off the top surface and inside the trench to leave a substantially flat layer of oxide having a target thickness at bottom of the trench.
References
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Patent
High breakdown voltage semiconductor device
TL;DR: In this paper, a precisely formed region of semiconductor material which correspondingly contains a precisely controlled amount of charge when depleted is provided in the proximity of a p-n junction in several kinds of semiconductors.
Patent
High voltage planar edge termination using a punch-through retarding implant
TL;DR: In this paper, a high voltage semiconductor structure having multiple guard rings (17a-17e), where guard rings farthest from a main junction are spaced further from each other than are guard rings closer to the main junction (14), is provided.
Patent
Semiconductor device having high breakdown voltage
TL;DR: In this paper, a semiconductor body (100) has a first device region (20) of one conductivity type forming with a second device region(13) of the opposite conductivities type provided adjacent one major surface (11) which is reverse-biassed in at least one mode of operation, so that, in the one mode, the depletion region reaches the floating further region (50) before the first pn junction (40) breaks down.