An intelligent network streaming and execution system for conventionally coded applications provides a system that partitions an application program into page segments by observing the manner in which the application program is conventionally installed. A minimal portion of the application program is installed on a client system and the user launches the application in the same ways that applications on other client file systems are started. An application program server streams the page segments to the client as the application program executes on the client and the client stores the page segments in a cache. Page segments are requested by the client from the application server whenever a page fault occurs from the cache for the application program. The client prefetches page segments from the application server or the application server pushes additional page segments to the client based on the pattern of page segment requests for that particular application. The user subscribes and unsubscribes to application programs, whenever the user accesses an application program a securely encrypted access token is obtained from a license server if the user has a valid subscription to the application program. The application server begins streaming the requested page segments to the client when it receives a valid access token from the client. The client performs server load balancing across a plurality of application servers. If the client observes a non-response or slow response condition from an application server or license server, it switches to another application or license server.

Intelligent network streaming and execution system for conventionally coded applications

We describe active and nonlinear wave propagation devices for generation and detection of (sub)millimeter wave and (sub)picosecond signals. Shock-wave nonlinear transmission lines (NLTL's) generate /spl sim/4-V step functions with less than 0.7-ps fall times. NLTL-gated sampling circuits for signal measurement have attained over 700-GHz bandwidth. Soliton propagation on NLTL's is used for picosecond impulse generation and broadband millimeter-wave frequency multiplication. Picosecond pulses can also be generated on traveling-wave structures loaded by resonant tunneling diodes. Applications include integration of photodetectors with sampling circuits for picosecond optical waveform measurements and instrumentation for millimeter-wave waveform and network (circuit) measurements both on-wafer and in free space. General properties of linear and nonlinear distributed devices and circuits are reviewed, including gain-bandwidth limits, dispersive and nondispersive propagation, shock-wave formation, and soliton propagation. >

Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics

The GaAs nonlinear transmission line (NLTL) is a monolithic millimeter-wave integrated circuit consisting of a high-impedance transmission line loaded by reverse-biased Schottky contacts. The engineering of functional monolithic NLTLs is considered. Through generation of shock waves on the NLTL, the authors have generated electrical step functions with approximately 5 V magnitude and less than 1.4 ps fall time. Diode sampling bridges strobed by NLTL shock-wave generators have attained bandwidths approaching 300 GHz and have applications in instruments for millimeter-wave waveform and network measurements. The authors discuss the circuit design and diode design requirements for picosecond NLTL shock-wave generators and NLTL-driven sampling circuits. >

GaAs nonlinear transmission lines for picosecond pulse generation and millimeter-wave sampling

A microwave monolithic integrated circuit includes a coplanar waveguide (CPW) formed by a composite silicon structure constituted by a relatively high resistivity substrate, a first oxide layer on the upper surface thereof, a relatively thin silicon layer formed on the surface of the first oxide layer, and a very thin second oxide layer formed on the surface of the thin silicon layer. The silicon layer and the first oxide layer on which it is formed constitutes a silicon-on-insulator or SOI structure. A metallic signal line and ground planes are bonded to the surface of the second oxide layer. The zone of the thin silicon layer which extends between the ground planes is doped with an active impurity to produce high conductivity therein. As a result, the electric component of a quasi-TEM wave traversing the waveguide is substantially restricted to the thin silicon layer and does not penetrate to the underlying bulk silicon substrate. This achieves significantly reduced transmission loss and a quality factor Q in the vicinity of 17 for the CPW. Passive and active circuits may be formed in regions of the thin silicon layer other than those used for the CPW.

Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate

An optimized server for streamed applications provides a streamed application server optimized to provide efficient delivery of streamed applications to client systems across a computer network such as the Internet. The server persistently stores streamed application program sets that contain streamed application file pages. Client systems request streamed application file pages from the server using a unique set of numbers common among all servers that store the particular streamed application file pages. A license server offloads the streamed application server by performing client access privilege validations. Commonly accessed streamed application file pages are stored in a cache on the streamed application server which attempts to retrieve requested streamed application file pages from the cache before retrieving them from persistent storage. Requested streamed application file pages are compressed before being sent to a client as well as those stored in the cache.

Optimized server for streamed applications

We have fabricated a GaAs diode sampling head which has a bandwidth of 130 GHz, which is a five times improvement over previous room‐temperature designs. This speed is attained with a monolithic sampling head design integrated with two nonlinear transmission lines which serve as the strobe pulse and test signal generators. A 4 ps transition time has been measured with the sampler. We have also measured sinusoidal waveforms to 120 GHz.

130 GHz GaAs monolithic integrated circuit sampling head

Voltage waveforms with 6 V amplitude and 1.6 ps fall time were generated by voltage shock‐wave formation on a hyperabrupt‐doped Schottky diode monolithic GaAs nonlinear transmission line.

Hyperabrupt‐doped GaAs nonlinear transmission line for picosecond shock‐wave generation

A high bandwidth RF sampler using equivalent time sampling comprising an RF coplanar waveguide integrated with sampling diodes on a gallium arsenide substrate. A monolithic, integrated coplanar strip nonlinear transmission line is integrated on the same substrate to receive sample pulses. These pulses are reshaped by the nonlinear transmission line to have a very fast edge. This edge is differentiated by a shunt inductance of a short circuit termination of a slot line portion of the RF signal coplanar waveguide. The resulting delta function sample pulses cause the sample diodes and integrated capacitors to develop an intermediate output frequency which is a replica of the RF signal at a lower frequency and no voltage conversion loss. RF signals of up to 300 Ghz can be sampled using this circuit.

Gallium arsenide monolithically integrated sampling head using equivalent time sampling having a bandwidth greater than 100 ghz

A nonlinear impedance transformer comprising a plurality of scaled L-C sections. The first section has its inductance and capacitance values selected to establish a characteristic impedance approximately equal to the output impedance of the local oscillator. The last section has its inductance and capacitance values selected to establish an output impedance which substantially matches the input impedance of whatever device to which the nonlinear impedance transformer is coupled. The impedance of each section is scaled logarithmically between the values of the input and output impedances. An FET driver can be integrated on the same substrate as integrated versions of the nonlinear impedance transformer. In such a case, the input impedance of the first section is set to the output impedance of the FET, i.e., about 10 ohms.

Gallium arsenide monolithically integrated nonlinear transmission line impedance transformer

An integrated coplanar strip nonlinear transmission line comprising a substrate of gallium arsenide upon which a heavily doped buried layer and a lightly doped surface layer of epitaxially grown gallium arsenide are grown. Two parallel conductors are integ This work was funded by the United States Government's Office of Naval Research under contract No. N99914-85-K-0381. The United States Government has a paid up license in this technology.

Robert A. Marsland

Papers

130 GHz GaAs monolithic integrated circuit sampling head

Hyperabrupt‐doped GaAs nonlinear transmission line for picosecond shock‐wave generation

Gallium arsenide monolithically integrated sampling head using equivalent time sampling having a bandwidth greater than 100 ghz

Gallium arsenide monolithically integrated nonlinear transmission line impedance transformer

Integrated coplanar strip nonlinear transmission line