Showing papers by "Robert A. Reed published in 1993"
TL;DR: In this paper, it is shown that the charge collection obtained off the power lines of a p-well CMOS device can be explained if one takes into account the fact that the well-substrate and source-well junctions compete for the diffusion charge.
Abstract: Monitoring pulses measured between the power pins of a microelectronic device exposed to high LET (linear energy transfer) ions yields important information on the SEU (single event upset) response of the circuit Analysis of p-well CMOS devices is complicated by the possibility of competition between junctions, but the results suggest that charge collection measurements are still sufficient to determine SEU parameters accurately It is shown that the charge collection obtained off the power lines of a p-well CMOS device can be explained if one takes into account the fact that the well-substrate and source-well junctions compete for the diffusion charge To produce a pulse that lies within the peak, the ion must cross the top and bottom junctions of the sensitive volume The first-order model remains a valid approximation of the complicated charge collection mechanisms that occur when an ion strikes each of the junctions A comparison of experimental data with the new theories is given >
30 citations
13 Sep 1993
TL;DR: In this paper, a method to determine accurate estimates of the critical charge and the sensitive volume thickness, using simple SEU measurements for a number of incident proton energies, is presented.
Abstract: The variation of SEU cross section with incident proton energy and angle of incidence is very sensitive to the thickness of the sensitive volume and the critical charge required for upset. This paper provides a method to determine accurate estimates of these important parameters, the critical charge and the sensitive volume thickness, using simple SEU measurements for a number incident proton energies. >
23 citations
13 Sep 1993
TL;DR: In this paper, an instrument is designed to characterize the complex radiation environments of space, including solar flares, in terms of the risk of SEUs in microelectronics and the risk to the health of astronauts.
Abstract: An instrument is described which is designed to characterize the complex radiation environments of space, including solar flares, in terms of the risk of SEUs in microelectronics and the risk to the health of astronauts. The data generated during exposure consist of pulse height spectra measured when energetic charged particles traverse p-n junctions having dimensions comparable to the SEU-sensitive junctions of modern microelectronics. Proper choice of junction allows the instrument to test environmental models and/or characterize the risk of SEU for specific technologies. Because the sensitive volume associated with each microjunction also has dimensions comparable to those of biological cells, the data can also be used to characterize the environment according to its risk to astronauts. >
4 citations