A negative type image recording material which is capable of effecting direct plate making by recording using a solid-state laser or semiconductor laser emitting an infrared-ray based on digital signals outputted from computers or the like, having components (A) to (E) which are more specifically a compound (A) which is degraded by the action of light or heat to generate an acid such as sulfonic acid or the like, a cross-linking agent (B) which has preferably two or more hydroxymethyl groups or alkoxymethyl groups, bonded to a benzene ring, which contains 3 to 5 benzene nuclei in the molecule, and which is cross-linked in the presence of an acid, such as a phenol derivative having a molecular weight of not greater than 1,200, at least one kind of alkali-soluble resin (C), an infrared absorbing agent (D), and organic basic compound (E) such as guanidine, aminomorpholine, pyridine and the like, or at least one compound selected from amino acids such as phenylalanine, tyrosine, alanylalanine, N-phenyl-β-alanine, nicotinic acid and the like and derivatives thereof.

Negative type image recording material

Antireflective compositions are provided that contain an ionic thermal acid generator material. Use of such a thermal acid generator material can significantly increase the shelf life of solutions of antireflective compositions in protic media. Antireflective compositions of the invention can be effectively used at a variety of wavelengths used to expose an overcoated photoresist layer, including 248 nm and 193 nm.

Antireflective coating compositions

The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent, and optionally, a photoacid generator and/or an acid and/or a thermal acid generator. The invention further relates to a process for using such a composition.

Positive-working photoimageable bottom antireflective coating

This invention provides an in situ monitoring technique and apparatus for chemical/mechanical planarization end point detection in the process of fabricating semiconductor or optical devices. Fabrication of semiconductor or optical devices often requires smooth planar surfaces, either on the surface of a wafer being processed or at some intermediate stage e.g. a surface of an interleaved layer. The detection in the present invention is accomplished by means of capacitively measuring the thickness of a dielectric layer on a conductive substrate. The measurement involves the dielectric layer, a flat electrode structure and a liquid interfacing the article and the electrode structure. Polishing slurry acts as the interfacing liquid. The electrode structure includes a measuring electrode, an insulator surrounding the measuring electrode, a guard electrode and another insulator surrounding the guard electrode. In the measurement a drive voltage is supplied to the measuring electrode, and in a bootstrap arrangement to a surrounding guard electrode, thereby measuring the capacitance of the dielectric layer of interest without interferring effect from shunt leakage resistance. The process and apparatus are useful not only for measuring the thickness of dielectric layers on conductive substrates in situ, during planarizing polishing, but also for measuring the dielectric thickness on substrates in other processes, e.g. measuring the dielectric layer thickness prior to or after an etching process.

In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection

Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

Spin-on-glass anti-reflective coatings for photolithography

A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

Antireflective coating for microlithography

An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition

Mid and deep-UV antireflection coatings and methods for use thereof

Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antireflective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

Top antireflective coating films

Positive resists sensitive to UV, electron beam, and x-ray radiation which are alkaline developable are formulated from a polymer material comprising recurrent structures having alkaline soluble groups pendent to the polymer backbone, a portion of which groups are substituted with acid labile groups.

Highly sensitive positive photoresist compositions

A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.

Robert Lavin Wood

Papers

Antireflective coating for microlithography

Mid and deep-UV antireflection coatings and methods for use thereof

Top antireflective coating films

Highly sensitive positive photoresist compositions

Top coat for acid catalyzed resists