http://eia.udg.es/%7Eqsalvi/papers/2006-MJ.pdf

Review of CMOS image sensors

Single substrate device is formed to have an image acquistition device and a controller. The controller on the substrate controls the system operation.

/pdf/cmos-active-pixel-sensor-type-imaging-system-on-a-chip-1pw7w4xxhm.pdf

CMOS active pixel sensor type imaging system on a chip

A mobile terminal and a control method thereof, which can obtain an image, are provided. A mobile terminal (100) includes a camera unit (121), a pictogram extraction unit (182) and a controller (180). The camera unit (121) obtains image information corresponding to at least one of a still image and a moving image. The pictogram extraction unit (182) extracts at least one pictogram from the obtained image information. The controller (180) detects information related to the extracted pictogram, and displays the detected information to be overlapped with the obtained image information. In the mobile terminal, the controller (180) includes, as the detected information, at least one of previously recorded information and currently searched information related to the extracted pictogram.

Mobile terminal and control method thereof

The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.

Active pixel sensor integrated with a pinned photodiode

There is described an indicia reading terminal that can be operative to capture a succession of frames of image data and that can be operative so that a certain frame of the succession of frames is subject to quality evaluation processing where a result of the quality evaluation processing is responsive to one or more of an incidence and sharpness of edge representations of the frame of image data.

Indicia reading terminal including frame quality evaluation processing

An active pixel sensor architecture comprising a semiconductor substrate having a plurality of pixels formed, thereon, incorporating microlens and lightshields into the pixel architecture. Each of the pixels further comprising: a photodetector region upon which incident light will form photoelectrons to be collected as a signal charge; a device for transferring the signal charge from the photodetector region to a charge storage region that is covered by a light shield; a sense node that is an input to an amplifier; the sense node being operatively connected to the signal storage region. The pixel architecture facilitates symmetrical design of pixels which allows for incorporation of light shield and microlens technology into the design.

Color active pixel sensor with electronic shuttering, anti-blooming and low cross talk

The world's first submicron pinned photodiode CMOS image sensors have been produced by adding an optimized image sensor module to a 33 V, 06 /spl mu/m CMOS process The 4-transistor pixel cells achieve excellent blue response, low dark current, and good dynamic range A full-color imager with good color reproduction has been produced using this technology

A 0.6 /spl mu/m CMOS pinned photodiode color imager technology

A pixelated image sensor having comprising a partially pinned photodiode which is formed a semiconductor of a first conductivity type formed on a surface of the sensor with at least one photodiode formed, within the semiconductor near the surface, the photodiode being formed from a second conductivity type opposite the first conductivity type; a pinning layer formed on the surface over at least a portion of the photodiode creating a pinned photodiode region, the pinning layer being formed from the first conductivity type; and an unpinned region formed near the surface in an area outside the portion used to form the pinning layer, the unpinned region is formed as a floating region that is employed as a capacitor. The partially pinned photodiode is useful in expanding the fill factor of photodetectors employing photodiode technology.

Partially pinned photodiode for solid state image sensors

An image sensor having a plurality of pixels arranged in a series of row and columns comprising: a semiconductor substrate having a plurality of pixels formed in rows and columns with at least two row adjacent pixels and at least two column adjacent pixels formed within the substrate; and at least one electrical function integrated within the adjacent pixels that is shared between the adjacent pixels. The electrical function can be either a contact region or an electrical circuit used in implementing either a photogate, a transfer gate, a reset gate, a row select gate, an amplifier drain, an output node, a floating diffusion contact, a reset drain, a lateral overflow gate, an overflow drain or an amplifier.

Robert M. Guidash

Papers

Active pixel sensor integrated with a pinned photodiode

Color active pixel sensor with electronic shuttering, anti-blooming and low cross talk

A 0.6 /spl mu/m CMOS pinned photodiode color imager technology

Partially pinned photodiode for solid state image sensors

Active pixel image sensor with shared amplifier read-out