Patent
Active pixel sensor integrated with a pinned photodiode
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TLDR
In this article, a pinned photodiode is integrated into the image sensing element of an active pixel sensor, and charge integrated within the active pixel is transferred into the charge sensing node by a transfer gate.Abstract:
The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.read more
Citations
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Patent
CMOS active pixel sensor type imaging system on a chip
Eric R. Fossum,Robert H. Nixon +1 more
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Active pixel sensor array with multiresolution readout
TL;DR: In this paper, an imaging device consisting of a monolithic complementary metal oxide semiconductor integrated circuit is presented, which includes a focal plane array of pixel cells (10), each one of the cells including a photogate (12) overlying the substrate (20) for accumulating photo-generated charge in an underlying portion of the substrate and a CCD device section (14) formed on the substrate adjacent the photogates (12), having a sensing node and at least one charge coupled device stage (16) for transferring charge from the underlying portion to the sensing node.
References
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Patent
Active pixel sensor with intra-pixel charge transfer
TL;DR: In this paper, an imaging device is formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary MOS semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate and a charge coupled device section formed on the substrate adjacent the photrogate having a sensing node connected to the output transistor and at least one charge coupled
Proceedings ArticleDOI
Active Pixel Sensors: Are CCD's Dinosaurs?
TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Patent
Multiple resolution image sensor
TL;DR: In this article, the number of pixels read out on each cycle may be reduced to provide a higher resolution, lower speed, readout of the area of interest, and the resulting signals can be merged into superpixel signals to provide high speed data capture, albeit at relatively lower resolution, since there will be a reduced number of data samples in each image.
Patent
Solid-state image-sensing device
TL;DR: In this paper, a resetting portion resets the transistor in such a way as to inhibit the transistor from operating in a sub-threshold region when the amount of light incident on the photosensitive element is below a predetermined level.
Journal ArticleDOI
CMOS active pixel image sensor
TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.