Showing papers by "Robert W. Brodersen published in 1970"
TL;DR: In this article, a theoretical model has been developed to explain the movement of a p − n junction in PbSe by the interdiffusion process, and the significance of the results to device fabrication and annealing is discussed.
Abstract: A theoretical model has been developed to explain the movement of a p‐n junction in PbSe by the interdiffusion process. This model, which is a modification of an interdiffusion theory due to Brebrick, has one value for the diffusion coefficient in p‐type material and another value in n‐type material. Solutions to the diffusion equation for this model are obtained and compared to experimental interdiffusion data for PbSe at 400°C obtained by the p‐n junction method. The significance of the results to device fabrication and annealing is discussed.
6 citations