Showing papers by "Rong Wang published in 1997"
01 Jan 1997
TL;DR: In this article, the authors measured the hysteresis of gas-liquid mass transfer rate and the corresponding radial liquid distribution in a trickle bed reactor to provide evidence for the correlation between these two behaviors.
Abstract: The hysteresis of gas-liquid mass transfer rate and the corresponding radial liquid distribution in a trickle bed reactor are measured to provide evidence for the correlation between these two behaviors. Experimental results indicate that the hysteresis of gas-liquid mass transfer originates from the nonuniformity of the hydrodynamic state of gas-liquid flow and the radial maldistribution of local k(gl)a corresponds very well to the radial maldistribution of liquid flow in the bed. The local liquid flow rate is also found to be nonuniform in the azimuthal direction. In view of maldistributed liquid flow even in the pulsing flow regime, the conventional plug flow model seems oversimplified for describing the behavior of a trickle bed.
7 citations
TL;DR: In this article, a reproducible procedure to fabricate high quality steps and step-edge junctions on a SrTiO3 (STO) substrate was presented, where the dynamic process of ion milling was simulated in theory.
Abstract: We report a reproducible procedure to fabricate high quality steps and step-edge junctions on SrTiO3(STO) substrate. The dynamic process of Ion Milling(IM) was simulated in theory, there exists a maximum slope angle for the steps prepared from ion milling. For 500eV Ar+ bombarding STO system, the angle is about 73°. High quality steps can be acquired with new technique procedure. Voltage modulation is about 10μV for a typical DC-SQUIDs fabricated on this type of substrate.
2 citations
TL;DR: In this paper, Nb/Al AlOx Ti tunneling junctions with fixed Nb and Ti thicknesses of 200 nm and Al thickness ranging from 10 to 70 nm were fabricated.
Abstract: Nb/Al AlOx Ti tunneling junctions with fixed Nb and Ti thicknesses of 200 nm and Al thickness ranging from 10 to 70 nm were fabricated. Preliminary results on the measurements of I – V characteristics at T = 1.3 K are reported, and are compared with a proximity-effect model recently proposed by Golubov et al..
1 citations