An improved method for crystallizing amorphous material with a moving beam of energy is disclosed. In this method, the energy beam is scanned in a manner to provide controlled, continuous motion of the crystallization front.

Method of crystallizing amorphous material with a moving energy beam

A method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, disposed nonepitaxially upon a substrate, into large single crystal areas, by controlling the lateral heat flow out of the melted regions of the areas for causing their recrystallization from a single nucleation site and for suppressing the formation of competitive nucleation sites at their edges.

Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas

A method is disclosed for improving the crystallinity of semiconductor films by scanning the surface of such films with a shaped, focused laser beam The laser is matched to the film so that the beam delivers sufficient energy thereto to heat the film above a temperature at which crystallization occurs along the scan track

Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof

A pulsed laser or flash lamp produces a short duration pulse of light for thermal processing of selected regions of a semiconductor device. The light pulse is directed towards the semiconductor device and irradiates selected surface regions of the device to be processed. Energy deposited by the light pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the light pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature and the remaining mass of the semiconductor device is not subjected to unnecessary or undesirable high temperature exposure.

Method involving pulsed light processing of semiconductor devices

An improved method and apparatus for crystallizing amorphous or polycrystalline material. In this invention, a material which is to be crystallized is formed on the substrate (10) and single crystalline seed material (18) is disposed in contact and/or adjacent to or with at least a portion of the material which is to be crystallized. A layer of material (20) which serves as a "wetting agent" is then formed over the material (18) to be crystallized. The structure thus formed is subjected to a heat treatment which melts the material (18) being crystallized and when the material solidifies its crystalline structure is substantially epitaxial based on the seed material. The "wetting agent" layer (20) serves to prevent deleterious balling up of the material during crystallization.

Lateral epitaxial growth by seeded solidification.

A METHOD OF PRODUCING ORIENTED CRYSTAL OVERGROWTH ON A MONOCRYSTALLINE OR AMORPHOUS SUBSTRATE WHEREIN A FILM OF CRYSTALLINE MATERIAL IS DEPOSITED ON THE SUBSTRATE AND REGIONS OF THE FILM ARE SELECTIVELY BOMBARDED WITH A LASER BEAM PULSE.

Ross Rupert Forster

Papers

Methods of producing single crystals on supporting substrates

Verfahren zur Erzeugung von Einkristallen auf Traegersubstraten