An efficient modeling technique and a novel CAD tool for the accurate prediction of the performance of integrated inductors and transformers is presented. This generic and process-independent approach generates lumped-element models that easily plug into the RF IC design flow. Their accuracy is established through comparisons with measurements of numerous fabricated inductor structures. This paper intends to provide answers to vital questions in regard to existing limits and future expectations of the performance of on-chip inductors using comprehensive nomographs and quantitative analysis of spiral inductor families. An LNA design paradigm depicts how first-time-working silicon can be achieved when on-chip inductors' coupling is taken into account during the layout design process, minimizing risk, time, and cost.

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Systematic analysis and modeling of integrated inductors and transformers in RF IC design

In a dielectric filter, from the top surface to the bottom surface of a substantially rectangular dielectric block, inner-conductor holes are formed. On the inner surfaces of the inner-conductor holes, inner conductors are formed except where non-conductor portions are formed in proximity to one of the top and bottom surfaces, in which the apertures of the inner-conductor holes are formed. On the outer surface of the dielectric block, an outer conductor is formed substantially over the entire outer surface, and input and output electrodes isolated from the outer conductor are coupled with the non-conductor portions in the respective inner-conductor holes at the ends of the dielectric block in the direction of array of the inner-conductor holes. In one of the surfaces in which the apertures of the inner-conductor holes are formed, or in one of the surfaces at the ends of the dielectric block in the direction of array of the inner-conductor holes, a concavity is formed, the inner surface thereof being covered with the outer conductor.

Dielectric filter, dielectric duplexer, and communication apparatus

We discuss the design of coupled spiral transmission-line baluns modeled after the Marchand type. The balun structure consists of a pair of coupled spiral conductors vertically offset across intervening polyimide layers. The baluns are fabricated on various substrates (glass and high- and low-resistivity silicon). The characteristics such as return loss, insertion loss, and output signal imbalance are measured. The center frequencies of 3-dB bandwidths (BWs), primarily determined by their conductor lengths, range from 1.2 to 3.5 GHz. The 3-dB BW normalized by the center frequency is /spl sim/1.48 in all cases. We observe an optimum BW for better performance. Return losses at the center frequencies range from 13 to 18 dB. Amplitude imbalance distributes in the range of 0.3-1.0 dB, depending on the sizes of devices and substrates. The minimum insertion loss is 0.55 dB for the balun on a glass substrate with 100-/spl mu/m-wide conductors. The devices fabricated on glass and high resistivity (>4000 n cm) silicon show remarkably similar behaviors despite the large difference in dielectric constant. This technique is applicable to monolithic microwave integrated circuits.

Design and characterization of multilayer spiral transmission-line baluns

A single-ended wideband downconversion Gilbert micromixer is demonstrated in this paper using 0.35-mum SiGe BiCMOS technology. A transimpedance amplifier with resistive feedback is utilized in the IF stage while a broadband Marchand balun is employed to generate wideband differential local oscillator signals. The planar Marchand balun topology employed in this paper can generate truly balanced signals even in the presence of the lossy low-resistivity (~10 Omegamiddotcm) silicon substrate. A systematic approach to measure the frequency response of each individual stage in a Gilbert mixer is developed in this paper. This single-ended wideband mixer has the conversion gain of 15 dB, IP1dB of -19 dBm, IIP3 of -7 dBm, and the noise figure of 13 dB. The mixer works from 3.5 to 14.5 GHz

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Monolithic Broadband Gilbert Micromixer With an Integrated Marchand Balun Using Standard Silicon IC Process

A balun design incorporating the functions of a splitter (combiner) which can be employed in a high power amplifier circuit configuration. The balun is formed of a dielectric multilayer board with conductor patterns on each conductor pattern layer. The balun includes the propagation of a half of an input signal to an in-phase output terminal, and also propagating a fourth of the input signal to first and second opposite-phase output terminals, the signal propagated to the first and second opposite-phase output terminals lagging 180 degrees behind the signal propagated to the in-phase output terminal. The balun provides the output signals at the first and second opposite-phase output terminals 180° out of phase employing through holes in the main line and coupling lines for promoting electromagnetic coupling therebetween.

Power splitter/combiner circuit, high power amplifier and balun circuit

The design and performance of microwave and MM-wave baluns using multilayer GaAs MMIC technology is presented For MM-wave designs a compact overlaid coupler is employed For lower frequencies it is shown that novel spiral couplers can be used Results for baluns operating at 30-40 GHz and 5-15 GHz are presented

Design and performance of GaAs MMIC CPW baluns using overlaid and spiral couplers

This paper describes results for novel multilayer passive components, fabricated on silicon substrates for Si/SiGe uniplanar MMICs. Results are compared for high resistivity silicon, high resistivity silicon with an added polyimide layer, and silicon with silicon dioxide (to represent SOI bonded silicon technology). The components that have been characterized include CPW and TFMS transmission lines and couplers, inductors, capacitors, and planar transformers.

S.B. Economides

Papers

Design and performance of GaAs MMIC CPW baluns using overlaid and spiral couplers

Multilayer passive components for uniplanar Si/SiGe MMICs

A Study of CPW Spiral Transformers Using Multilayer GaAs MMIC Technology