scispace - formally typeset
A

Ali A. Rezazadeh

Researcher at University of Manchester

Publications -  135
Citations -  1676

Ali A. Rezazadeh is an academic researcher from University of Manchester. The author has contributed to research in topics: Monolithic microwave integrated circuit & High-electron-mobility transistor. The author has an hindex of 15, co-authored 128 publications receiving 1435 citations. Previous affiliations of Ali A. Rezazadeh include King's College London.

Papers
More filters
Journal ArticleDOI

Empirical low-field mobility model for III-V compounds applicable in device simulation codes

TL;DR: In this paper, a Caughey-Thomas-like mobility model with temperature and composition dependent coefficients is used to describe the dependence of electron and hole mobilities on temperature, doping concentration, and alloy composition.
Journal ArticleDOI

Changes in the dielectric properties of rat tissue as a function of age at microwave frequencies

TL;DR: The dielectric properties of ten rat tissues at six different ages were measured using an open-ended coaxial probe and a computer controlled network analyser to provide some insight into possible differences in the assessment of exposure for children and adults.
Journal ArticleDOI

Microwave detection at 110 GHz by nanowires with broken symmetry

TL;DR: By using arrays of nanowires with intentionally broken symmetry, they were able to detect microwaves up to 110 GHz at room temperature, which is, to the best of the knowledge, the highest speed that has been demonstrated in different types of novel electronic nanostructures to date.
Journal ArticleDOI

Temperature Effect on DC and Equivalent Circuit Parameters of 0.15- $\mu \text{m}$ Gate Length GaN/SiC HEMT for Microwave Applications

TL;DR: In this paper, the thermal properties of GaN/SiC-based high-electron-mobility transistor with on-wafer measurements were analyzed and the effect of thermal effects on device parameters were deduced.
Journal ArticleDOI

Stepping toward standard methods of small-signal parameter extraction for HBTs

TL;DR: In this paper, an improved HBT small-signal parameter extraction procedure is presented in which all the equivalent circuit elements are extracted analytically without reference to numerical optimization, and a new method is developed to extract the total delay time of HBTs at low frequencies, without the need to measure h/sub 21/ at very high frequencies and/or extrapolate it with -20 dB/dec rolloff.