S
S.E. Holland
Researcher at Lawrence Berkeley National Laboratory
Publications - 82
Citations - 5146
S.E. Holland is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Detector & Silicon. The author has an hindex of 30, co-authored 82 publications receiving 4655 citations. Previous affiliations of S.E. Holland include University of California, Berkeley & Lawrence Livermore National Laboratory.
Papers
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Proceedings ArticleDOI
Characterization of DECam focal plane detectors
H. Thomas Diehl,Robert Angstadt,J. Campa,H. Cease,G. Derylo,John H. Emes,Juan Estrada,Donna Kubik,B. Flaugher,S.E. Holland,Michelle Jonas,William F. Kolbe,John Krider,S. E. Kuhlmann,K. Kuk,M. Maiorino,N. Palaio,A. A. Plazas,Natalie A. Roe,V. Scarpine,K. Schultz,Terri Shaw,H. Spinka,W. Stuermer +23 more
TL;DR: DECam is a 520 Mpix, 3 square-deg FOV imager being built for the Blanco 4m Telescope at CTIO as discussed by the authors, which will be used for the 'Dark Energy Survey' of the southern galactic cap.
Journal ArticleDOI
An IC-compatible detector process
TL;DR: In this paper, a silicon radiation detector fabrication process which exploits the excellent gettering properties of a backside layer of phosphorous-doped polysilicon has been developed and characterized.
Journal ArticleDOI
The CDF SVX: A silicon vertex detector for a hadron collider
Wc Carithers,Rp Ely,C. Haber,S.E. Holland,F. Kirsten,S. Kleinfelder,Helmuth Spieler,Wc Wester,M. Wong,F. Bedeschi,S. Galeotti,A. Menzione,Giovanni Punzi,F. Raffaelli,F. Zetti,D. Amidei,T. Bohn,H. Carter,M Hyrcyk,R. Kephart,Charles A. Nelson,S Segler,D. Tousignant,S. Tkacek,A. Tollestrup,K Turner,R.J. Yarema,T. Zimmermann,C. Boswell,J. A. J. Matthews,S. Vejcik +30 more
TL;DR: A silicon microstrip vertex detector is being constructed as an upgrade to the CDF detector at the Fermilab Tevatron-1 p p collider as mentioned in this paper, which should allow the tagging of long-lived heavy flavors produced in p p collisions.
Proceedings ArticleDOI
A 200/spl times/200 CCD image sensor fabricated on high-resistivity silicon
S.E. Holland,Gerson Goldhaber,Donald E. Groom,William W. Moses,C. R. Pennypacker,Saul Perlmutter,N.W. Wang,R.J. Stover,Mingzhi Wei +8 more
TL;DR: In this article, a charge coupled device (CCD) image sensor fabricated on high-resistivity silicon is described, which allows for operation of the CCD with the entire 300 /spl mu/m substrate depleted.
Journal ArticleDOI
Fabrication of back-illuminated, fully depleted charge-coupled devices
TL;DR: In this paper, a fabrication strategy to produce fully depleted, back-illuminated charge-coupled devices (CCDs) is described, where wafers are partially processed at a commercial foundry using standard processing techniques.