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S.F. Cheng

Researcher at Naval Surface Warfare Center

Publications -  5
Citations -  47

S.F. Cheng is an academic researcher from Naval Surface Warfare Center. The author has contributed to research in topics: Magnetoresistance & Spin valve. The author has an hindex of 4, co-authored 5 publications receiving 44 citations.

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Structure and magnetic properties of magnetron-sputtered Fe/Cu multilayered thin films.

TL;DR: The structure and magnetic properties of Fe/Cu multilayered films with a constant total Fe thickness of 1050 A but varying Fe-layer thickness from 6.3 to 42 A and varying Cu to Fe thickness ratio from 1 to 3 were investigated using x-ray diffraction, XRD, XAFS, and magnetic measurements.
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Effect of nitrogenation on the magnetostriction of Y2Fe17, Pr2Fe17 and Nd2Fe17

TL;DR: Magnetostriction measurements on nitrogenated Y2Fe17, Pr 2Fe17 and Nd2Fe 17 from cryogenic temperatures to 300 K yield surprising results as mentioned in this paper, revealing a strong negative basal plane λγ,2 constant in a background of a positive average magnetostriction, even though Curie temperatures, magnetizations and magnetic anisotropies of the R2 Fe17 compounds (R Y, Pr, Nd) are all substantially increased by nitrogenation, the magnetostrictions are frequently unchanged or reduced.
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Structure and magnetism of sputtered Fe/Cu multilayers

TL;DR: X-ray diffraction and X-ray absorption fine structure spectroscopy showed that in sputtered Fe/Cu multilayers the thinnest Fe layers (10.5 and 6.3 A) have fcc structure and a dramatically reduced magnetic moment as mentioned in this paper.
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Magnetostrictive effects in Cu/Co/Cu/Fe spin valve structures

TL;DR: In this article, the spin-valve magnetoresistance of a series of multi-layer films was investigated under applied stress by observing changes in the spinvalve magnetic properties.
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Time Dependent Magnetic Switching in Spin Valve Structures

TL;DR: In this article, the authors observed time dependent magnetic switching in spin-valve sandwich structures of Cu/Co/Cu/Fe films grown on silicon and Kapton substrates.