The invention discloses a transparent and flexible photoelectric sensor and a preparation method thereof. An organic heterojunction material system is adopted as an active layer material; the material system can significantly improve the photoelectric responsivity of a prepared photoelectric detector, reduces the working voltage of the photoelectric detector and improves the flexible folding degree of the photoelectric sensor when applied to the photoelectric sensor. Furthermore, a flexible material layer, a dielectric layer and a gate electrode almost all are transparent, so that the finally prepared photoelectric sensor is completely transparent, and can be relatively well illuminated. In addition, the photoelectric sensor obtained by the preparation method is ultrathin.

Transparent and flexible photoelectric sensor and preparation method thereof

com Abstract- In this work, we have investigated the effect of gate voltage on the performance of poly(3-hexylthio phene) (P3HT) and (6,6)-phenyl C61-butyric acid methylester (PCBM) bulk hetero-junction based organic phototransistor. Transistor was fabricated in MESFET configuration with top gate and bottom drain-source electrodes on glass substrate. Active layer showed Schottky type contact with Gate electrode and Ohmic contact with Drain-Source electrodes. Current-Voltage (1-V) characteristics of the device were studied under dark and UV -Vis illumination. Active layer of the device has shown p-type and am bipolar properties under dark and UV-Vis illumination, respectively. Drain to source current of the phototransistor was found dependent on the illumination intensity and gate to source voltage. Photo sensitivity and responsivity values of the device were found to decrease exponentially with the increase of gate voltage. Photo sensitivity and responsivity values of the device were found equal to 11 and 0.024 AIW, respectively, at 90mW/cm2 UV-Vis illumination intensity and 0 gate voltage. anthrncene based highly photosensitive phototransistor with carrier mobility and photo responsivity values equal to 0.2-1.6 cm2V·IS-1 and 1.0-1.1 x 104 AWl, respectively, under an illumination intensity of 104 11 Wcm·2• Phototransistors based on thin films of P3HT 181, BPTT 191, TiOPc 1101 and Pentacene 1111 were also demonstrnted and photo responsivity values of these devices were reported in the rnnge of 1.3 to 250 A W·1• Yu et at. 1121 developed single crystalline BPE-PTCDI nanowires based high performance phototrnnsistors with a maximum photo responsivity value of lAO x 103 A WI under red and green light illumination. Organic bulk hetero-junction based phototransistors, using the blends of two or more organic semiconductors, were also well investigated with an aim to increase their performance since the demonstrntion of first organic bulk hetero-junction based phototrnnsistors by Marjanovic et a1. (13) which were realized using MDMO­ PPV:PCBM blends with trnnsparent gate dielectrics. Recently, a highly sensitive near infrared phototransistor was reported by Xu et at. 1141, which was based on an organic bulk hetero­ junction of DPP-DTT and PCBM Mok et aI. (15) fabricated and charncterized an organic phototrnnsistor using the blend of P3HT and Ti02 nanoparticles, and photo sensitivity of the device was reported to be the function of the concentrntion of Ti02 nanoparticles, wavelength of illumination and the voltage between drnin and souree electrodes.

S. Karimov

Papers

of the effect of gate voltage on the performance of organic bulk hetero-junction based phototransistor