S
S. M. Chaudhari
Researcher at Savitribai Phule Pune University
Publications - 31
Citations - 394
S. M. Chaudhari is an academic researcher from Savitribai Phule Pune University. The author has contributed to research in topics: Thin film & Conversion electron mössbauer spectroscopy. The author has an hindex of 10, co-authored 31 publications receiving 387 citations.
Papers
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Pulsed laser deposition of iron oxide and ferrite films
Sushama Joshi,Rashmi Nawathey,Vilas N. Koinkar,V.P. Godbole,S. M. Chaudhari,S. B. Ogale,S. K. Date +6 more
TL;DR: In this paper, the variation in the film properties as a function of the substrate temperature and oxygen partial pressure during deposition was studied, and conversion electron Mossbauser spectroscopic analysis showed that the stoichiometry and microstructure of such films depend on these deposition conditions.
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Properties of carbon films deposited by pulsed laser vaporization from pyrolytic graphite
TL;DR: Amorphous carbon films have been deposited on silicon and quartz substrates by pulsed ruby laser vaporization from pyrolytic graphite, and the properties of the deposited carbon films were studied using IR and UV-VIS transmission, ellipsometry, and laser-Raman spectroscopies as mentioned in this paper.
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Interface-sensitive conversion-electron Mössbauer study of ion-beam mixing at the Fe-Al interface.
TL;DR: Ion-beam-induced atomic mixing and the effect of thermally activated transformations at the Fe-Al interface have been studied for the first time with use of the technique of conversion-electron 57 Fe Mossbauer spectroscopy (CEMS).
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Deposition of tin oxide films by pulsed laser evaporation
TL;DR: In this paper, a single-phase SnO2 film was found to have an energy gap of 3.5 eV and spectroscopic ellipsometry measurements indicated the refractive index lobe typically between 1.8-1.9 over the wavelength range of 400-800 nm.
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Pulsed laser deposition of barium titanate films on silicon
TL;DR: In this paper, the dependence of the film properties on laser energy density, oxygen partial pressure during deposition and substrate bias has been investigated and optimum conditions have been brought out for obtaining single phase stoichiometric thin films.