S
S. Watahiki
Researcher at Hitachi
Publications - 11
Citations - 1626
S. Watahiki is an academic researcher from Hitachi. The author has contributed to research in topics: Solar cell & Laser. The author has an hindex of 8, co-authored 11 publications receiving 1609 citations.
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Journal ArticleDOI
Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
TL;DR: In this article, a single quantum well was fabricated on GaP wafers by gas-source molecular beam epitaxy in which a nitrogen radical is used as the nitrogen source, and the structure and luminescence properties of the quantum well were investigated by transmission electron microscopy and photoluminescence measurements.
Journal ArticleDOI
GaInP single junction and GaInP/GaAs two junction thin-film solar cell structures by epitaxial lift-off
TL;DR: In this article, the epitaxial lift-off (ELO) technique was used in forming a thin-film GaInP/GaAs two-junction monolithic tandem solar cell structure.
Journal ArticleDOI
GaNAs grown by gas source molecular beam epitaxy
Masahiko Kondow,Kazuhisa Uomi,Atsuko Niwa,Takeshi Kitatani,S. Watahiki,Yoshiaki Yazawa,Kazuhiko Hosomi,T. Mozume +7 more
TL;DR: In this article, the two main keys to growing GaNAs are reducing layer thickness and using a highly efficient N source, which is the main key to reducing the layer thickness.
Proceedings ArticleDOI
Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell
TL;DR: In this article, three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell.