S
Sae-Young Kim
Researcher at Samsung
Publications - 7
Citations - 77
Sae-Young Kim is an academic researcher from Samsung. The author has contributed to research in topics: Image sensor & Pixel. The author has an hindex of 4, co-authored 7 publications receiving 41 citations.
Papers
More filters
Journal ArticleDOI
A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7- $\mu$ m Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation
Min-Sun Keel,Young-Gu Jin,Young-Chan Kim,Daeyun Kim,Yeomyung Kim,Myunghan Bae,Bumsik Chung,Sooho Son,Hogyun Kim,Taemin An,Sung-Ho Choi,Taesub Jung,Yong Hun Kwon,Sungyoung Seo,Sae-Young Kim,Kwanghyuk Bae,Seung Chul Shin,Myoungoh Ki,Seoungjae Yoo,Chang-Rok Moon,Hyunsurk Ryu,Joonseok Kim +21 more
TL;DR: Motion artifact and column FPPN are successfully removed in the depth map and the proposed ToF sensor shows depth noise less than 0.57% with 940-nm illuminator over the working distance up to 4 m, and consumes only 160 mW for VGA output at 60 frames/s.
Proceedings ArticleDOI
A 640×480 Indirect Time-of-Flight CMOS Image Sensor with 4-tap 7-μm Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation Scheme
Min-Sun Keel,Young-Gu Jin,Young-Chan Kim,Daeyun Kim,Yeomyung Kim,Myunghan Bae,Bumsik Chung,Sooho Son,Hogyun Kim,Taemin An,Sung-Ho Choi,Taesub Jung,Yong Hun Kwon,Sungyoung Seo,Sae-Young Kim,Kwanghyuk Bae,Seung Chul Shin,Myoungoh Ki,Chang-Rok Moon,Hyunsurk Ryu +19 more
TL;DR: The proposed ToF sensor shows depth noise less than 0.62% with 940-nm illuminator over the working distance up to 400 cm, and consumes 197 mW for VGA, which is 0.64 pW/pixel.
Patent
CMOS image sensor with pocket photodiode for minimizng image lag
TL;DR: In this paper, a pocket photodiode is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface abuts the semiconductor substrate.
Journal ArticleDOI
A 4-tap global shutter pixel with enhanced IR sensitivity for VGA time-of-flight CMOS image sensors
Taesub Jung,Yong Hun Kwon,Sungyoung Seo,Min-Sun Keel,Changkeun Lee,Sung-Ho Choi,Sae-Young Kim,S.L. Cho,Young-Chan Kim,Young-Gu Jin,Moo-Sup Lim,Hyunsurk Ryu,Yi-tae Kim,Joonseok Kim,Chang-Rok Moon +14 more
TL;DR: An indirect time-of-flight (ToF) CMOS image sensor has been designed with 4-tap 7 μm global shutter pixel in back-side illumination process and shows depth noise less than 0.3 % with 940 nm illuminator in even long distance.
Patent
Image sensor and method of stabilizing a black level in an image sensor
TL;DR: An image sensor includes a substrate, an anti-reflection board and a light shielding film as discussed by the authors, which can be used in a CCD-type image sensor and a CMOS type image sensor to provide a stabilized black level.