A barrier layer is deposited over a layer of passivation including in an opening to a contact pad created in the layer of passivation. A column of three layers of metal is formed overlying the barrier layer and aligned with the contact pad and having a diameter that is about equal to the surface of the contact pad. The three metal layers of the column comprise, in succession when proceeding from the layer that is in contact with the barrier layer, a layer of pillar metal, a layer of under bump metal and a layer of solder metal. The layer of pillar metal is reduced in diameter, the barrier layer is selectively removed from the surface of the layer of passivation after which reflowing of the solder metal completes the solder bump of the invention.

Low fabrication cost, fine pitch and high reliability solder bump

A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure.

Method of wire bonding over active area of a semiconductor circuit

A semiconductor device, including: a semiconductor layer; an electrode pad formed above the semiconductor layer; an insulating layer formed over the electrode pad and having an opening which exposes at least part of the electrode pad; and a bump formed at least in the opening. The bump includes: a first bump layer formed in the opening; an underlayer formed above the first bump layer and the insulating layer positioned around the first bump layer; and a second bump layer formed on the underlayer.

Semiconductor device and method of manufacturing the same

A method of assembling chips A first chip and a second chip are provided At least one conductive pillar is formed on the first chip, and a conductive connecting material is formed on the conductive pillar The second chip also comprises at least one conductive pillar The first chip is connected to the second chip via the conductive pillars and the conductive connecting material

Method of assembling chips

In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during wafer level semiconductor device testing, is completely or partially removed over a surface area that is smaller than the surface area of the contact pad using methods of metal dry etching or wet etching. The contact pad can be accessed either by interconnect metal created in a plane of the contact pad or by via that are provided through the layer of dielectric over which the contact pad has been deposited. The process can be further extended by the deposition, patterning and etching of a layer of polyimide over the layer of passivation that serves to protect the contact pad.

Reliable metal bumps on top of I/O pads after removal of test probe marks

The invention provides a method for readily forming a bump with a desired width, a semiconductor device and a method for making the same, a circuit board, and an electronic device. A method for forming a bump includes forming an opening in an insulating film which exposes at least a part of a pad, and forming the bump so as to be connected to the pad. A resist layer 20 defines a through hole which extends over at least a part of the pad in plan view. A metal layer is formed in the opening so as to connect to the exposed portion of the pad.

Method for forming bump, semiconductor device and method for making the same, circuit board, and electronic device

PROBLEM TO BE SOLVED: To provide a bump forming method whereby bumps having desired widths can be formed simply, a semiconductor device, a manufacturing method of the device, a circuit board, and an electronic appliance. SOLUTION: The bump forming method is the one wherein each opening portion 16 for exposing at least a portion of each pad 12 is so formed on an insulation film 15 as to form each bump connected with each pad 12. The bump forming method has a step for forming a resist layer 12 having through holes 22 each of which overlaps in a planar way with at least a portion of each pad 12, a step for forming each opening portion 16 on the insulation film 15, and a step for forming each metal layer connected with each pad 12 exposed from each opening portion 16 to the external.

Bump forming method, semiconductor device, manufacturing method thereof, circuit board, and electronic appliance

PURPOSE: A method for forming a bump is provided to form a bump by a simple process by forming an opening in an insulation layer while using a through hole in a resist layer and by forming a metal layer coupled to a pad. CONSTITUTION: The first insulation layer has the first opening exposing the first part of a pad(12). The second insulation layer is formed on the first insulation layer and the first part of the pad. A resist layer(20) has a through hole(22) that two-dimensionally overlaps at least a part of the first opening. The second opening exposes at least a part of the first part through the through hole in the second insulation layer. A metal layer(30,32) coupled to the pad exposed by the second opening is formed by using the through hole.

Sakurai Kazunori

Papers

Method for forming bump, semiconductor device and method for making the same, circuit board, and electronic device

Bump forming method, semiconductor device, manufacturing method thereof, circuit board, and electronic appliance

Method for forming bump and method for fabricating semiconductor device to form bump by simple process