S
Sandro Solmi
Researcher at National Research Council
Publications - 104
Citations - 2333
Sandro Solmi is an academic researcher from National Research Council. The author has contributed to research in topics: Silicon & Ion implantation. The author has an hindex of 28, co-authored 104 publications receiving 2300 citations.
Papers
More filters
Journal ArticleDOI
Diffusion of boron in silicon during post-implantation annealing
TL;DR: In this paper, a simulation program taking these phenomena into account has been developed by modifying the supreme iii code, which represents a significative improvement of the diffusion simulation of B implanted in crystalline Si.
Journal ArticleDOI
High‐concentration boron diffusion in silicon: Simulation of the precipitation phenomena
TL;DR: In this article, an extensive investigation on the diffusion of boron implanted at high concentration in preamorphized silicon has been carried out for rapid thermal annealing and conventional furnaces.
Journal ArticleDOI
Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon
TL;DR: In this paper, the physical nature of electrically inactive phosphorus in silicon was investigated by annealing experiments performed on laser annealed specimens doped by ion implantation up to 5×1021 at/cm3.
Journal ArticleDOI
Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates
TL;DR: The formation and the diffusion behavior of this inactive dopant are in keeping with a preprecipitation phenomenon.
Journal ArticleDOI
Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials
TL;DR: In this article, the influence of lattice defects induced by silicon implantation on the B, P, As, and Sb diffusivities was investigated after annealing between 700 and 900 degrees C. The authors determined the depth position of the residual implantation defects in undoped samples by the analysis of the rocking curves obtained by triple crystal x-ray diffraction and transmission electron microscopy.