Journal ArticleDOI
Diffusion of boron in silicon during post-implantation annealing
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In this paper, a simulation program taking these phenomena into account has been developed by modifying the supreme iii code, which represents a significative improvement of the diffusion simulation of B implanted in crystalline Si.Abstract:
The diffusion of B implanted in Si has been investigated at different concentrations in a wide range of experimental conditions (temperature from 800 to 1000 °C and time from 10 s to 8 h) by using furnace and rapid thermal treatments. In particular, the transient enhanced diffusion induced by the implantation damage in the early phase of the annealing and the precipitation occurring in concomitance with the diffusion for dopant concentration exceeding the solid solubility have been extensively analyzed. A simulation program taking these phenomena into account has been developed by modifying the supreme iii code. A satisfactory agreement with experimental data has been obtained for all the investigated conditions. The model represents a significative improvement of the diffusion simulation of B implanted in crystalline Si. In fact, the more commonly used codes of process simulation do not evaluate adequately the effects of the above considered phenomena.read more
Citations
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Journal ArticleDOI
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
Peter Stolk,H.-J. Gossmann,D. J. Eaglesham,Dale Conrad Jacobson,Conor S. Rafferty,G. H. Gilmer,Martín Jaraíz,J. M. Poate,H. S. Luftman,T. E. Haynes +9 more
TL;DR: In this paper, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE) to study the mechanisms of TED.
Journal ArticleDOI
Ion-beam-induced amorphization and recrystallization in silicon
TL;DR: In this paper, the most significant experimental observations related to ion-beam-induced amorphization in Si and the models that have been developed to describe the process are described and analyzed.
Book
SiGe Heterojunction Bipolar Transistors
TL;DR: In this paper, the physics, materials science and technology of silicon bipolar transistors and SiGe BiCMOS transistors are described in a unified manner, and a unified view of the new developments in bipolar technology is presented.
Journal ArticleDOI
Pre-amorphization damage in ion-implanted silicon
TL;DR: In this article, the authors showed that the critical number of displaced Si atoms required for pre-amorphization damage formation increases with the mass of the implanted species and was determined by Rutherford backscattering spectrometry and channeling analysis to range from 1.5 × 1016/cm2 for B ions to (1.5-2) × 1017/cm 2 for Sb ions.
Journal ArticleDOI
Mechanisms of boron diffusion in silicon and germanium
TL;DR: In this article, the authors reviewed a large amount of experimental work and present their current understanding of the B diffusion mechanism, disentangling concomitant effects and describing the underlying physics.
References
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Book ChapterDOI
Ion implantation in semiconductors
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Ion Implantation in Semiconductors
James W. Mayer,József Gyulai +1 more
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Journal ArticleDOI
Theory of diffusion-limited precipitation
TL;DR: In this paper, a simple theory for diffusion-limited general precipitation from a supersaturated solution upon an array of particles is described, and the time dependence of the unprecipitated fraction of the excess solute for small spherical, spheroidal, and cylindrical particles is calculated.
Journal ArticleDOI
VLSI Process modeling—SUPREM III
TL;DR: A new and significantly more capable version of the process-simulation tool SUPREM III is described--SUPREM III--which incorporates process models suitable for VLSI device design, and for the first time, models multilayer structures.
Journal ArticleDOI
Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
TL;DR: In this paper, the anomalous diffusion of ion implanted boron into silicon is shown to be a transient effect with a decay time that decreases rapidly with increasing anneal temperature.